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High electron mobility transistors (HEMTs) are used in microwave circuit applications. These transistors behave much like conventional field effect transistors (FETs): a conducting channel between drain and source electrodes can be affected by applying a voltage to the gate electrode. This causes modulation of the drain-source current. In a HEMT, a hetero structure that confines the charge carriers to a thin layer creates the conducting channel. The concentration of the carriers and their speed in this layer enables the transistor to maintain a high gain at very high frequencies. Products & Services
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Learn more about Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
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Learn more about Metal-oxide Semiconductor FET (MOSFET)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
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Learn more about Junction Field-Effect Transistors (JFET)
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.
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AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes).
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ELIAS FARACLAS [1] , RICHARD T. WEBSTER [2], GEORGE BRANDES [3] AND A. F. M. ANWAR [1]
The dependence of microwave performance of GaN/AlGaN High Electron Mobility Transistors (HEMTs),...
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P.O. Ye [ ] , B. Yang, K.K. Ng, J. Bude
Agere Systems, 555 Union Boulevard Allentown, PA 18109, U.S.A.
G.D. Wilk
ASM America, 3440 East University Drive Phoenix, AZ 85034, U.S.A.
S. Haider,...
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Y.-F. WU, M. MOORE, T. WISLEDER, P.M. CHAVARKAR, AND P. PARIKH
Cree Santa Barbara Technology Center, 340 Storke Road, Goleta, CA 93117, USA Email: yifeng_wu@cree.com; Tel. 805 968 9460; Fax 805 968...
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ARVYDAS MATULIONIS [1]
Semiconductor Physics Institute, A. Go tauto 11, Vilnius 01108 Lithuania
Overview
Additional friction due to Pauli constraint, channel self-heating, alloy scattering,...
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Overview
S.A.VITUSEVICH, S.V.DANYLYUK AND N.KLEIN
Institut f r Schichten und Grenzfl chen and CNI - Centre of Nanoelectronic Systems for Information Technology, Forschungszentrum J lich, D-52425...
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