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From Veeco Instruments
Gate spacer engineering has become one of the primary concerns in dimension metrology. This application note discusses recent advances in 3D atomic force microscopy (3D-AFM) that solve the specialized characterization needs for critical sidewall spacer geometry controls, including multiple spacer thickness and nitride spacer pulldown. Sidewall spacers are used for precise MOSFET engineering, and they directly define channel length, junction geometry and abruptness, and, therefore, the final transistor electrical characteristics. Spacer engineering has advanced to a level where conventional CD-SEM and optical scatterometry (OCD) face fundamental limitations Since advanced logic and memory semiconductor device manufacturing strictly adheres to the ITRS roadmap (see Table 1), manufacturers have turned to advanced 3D metrology to control the feature shape dimensions for 65 and 45nm node patterns created by microlithography processes. Products & Services
Semiconductor metrology instruments are designed for wafer and thin film in-line inspection after semiconductor processing. They include capacitance gages, C-V systems, electron beam probes, ellipsometers, interferometers, I-V system, magnetometers, optical systems, profilometers, reflectometers, resistance probes, RHEED systems, and X-ray diffractometers.
Electronic fasteners and hardware are small components for spacing or positioning electronic devices on printed circuit boards.
Surface metrology equipment is used to measure the surface finish and/or geometry of engineering components. Surface texture and topology characteristics include surface roughness, contour, form, waviness and defects.
Posts, spacers, and standoffs are threaded and used in applications where boards, plates, or other items need to be fastened to each other.
Chemical testing services test, analyze, and certify a wide range of chemicals for purity, chemical compatibility, and environmental impact.
Product Announcements
Topics of Interest
As 45nm is introduced into production and 32nm node is in extensive development there is an an increasing need for accurate CD metrology in both process development and in-line manufacturing control.
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3D Atomic Force Microscopy as an Alternative to X-SEM and TEM for Advanced Process Metrology double for each device node at 90nm Introduction and below, which means a significant As increasing demand...
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”CD measurements must account for side wall shape. Process control such as (stepper) focus, exposure and etch bias will require greater precision and 3D capability.” A restatement of this ITRS 2001...
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This application note highlights the issues with Shallow Trench Isolation (STI) etch metrology, current metrology techniques and the benefits of Atomic Force Microscopy (AFM) for characterization and...
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As increasing demand for smaller device feature data drives wafer development costs up, process developers seek new metrology solutions to better address today’s stringent process requirements.
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