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Using the TC1142 for Biasing a GaAs Power Amplifier

From Microchip Technology, Inc.
 

 
RF bandwidths for cellular systems such as AMPS, TACS, GSM, TDMA, and CDMA range from 800MHz to 1.0GHz. To provide RF transmissions over this range of frequencies, Gallium Arsenide (GaAs) has become the technology of choice and offers several advantages over silicon technology: a much higher cutoff frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch.

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Hamamatsu Corporation USA - Solid State Division
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Topics of Interest
Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is... (Read More)
1. Introduction The wireless industry is experiencing explosive growth with applications like GSM cellular telephony, Bluetooth, and wireless LAN becoming commodities of everyday life. One major... (Read More)
9.11.4 Gallium Arsenide Near-Infrared Lasers The oldest and best-developed family of diode lasers have active layers of GaAlAs or GaAs and are fabricated on GaAs. They are usually called "gallium... (Read More)
Petteri Alinikula, Nokia Research Center It merenkatu 11 13 00045 Helsinki, Finland Wireless telecommunications will enter a new era in the coming years. New systems and new customer needs... (Read More)
Overview Until the mid-1990s, the cellular RF power amplification applications were based upon utilizing either silicon bipolar transistors or gallium arsenide MESFETs. The introduction of the high... (Read More)