Aluminum Nitride (AlN) Substrate
Featured Product from 3X Ceramic Parts Company Limited
Aluminum Nitride (AlN) Substrate Description:
AlN substrate is produced by tape casting using AlN powder as raw material and high temperature sintering. It has all the unique properties of AlN material and meets the requirements for electronic packaging baseplate, which makes it the key material in high density, high power and MCM semiconductor devices, HBLED and packaging.
Key properties of Aluminum Nitride Ceramic:
High thermal conductivity, which is 5 to 10 times of Alumina
Thermal expansion coefficient matches with that of silicon
Good mechanical property, which is close to Al2O3 and better than BeO
Distinct electrical properties, with very high electrical resistivity and low dielectric loss
Compatible with circuit materials, multilayer wiring could be used to achieve high density and miniaturization of packaging Non-toxic, environment friendly
Properties Sheet of Aluminum Nitride Substate :
| Property | Unit | Typical Values |
|---|---|---|
| Color | - | Grey or greyish white |
| Density | g/cm3 | ≥3.3 |
| Thermal Conductivity (25?) | W/(m.K) | ≥170 |
| Coefficient of thermal expansion 25-350? | /? | 4.5x10-6 |
| Volume resistivity | Ω.cm | >1014 |
| Dielectric Constant (1MHz) | - | <9.3 |
| Break Strength | KV/mm | ≥25.00 |
| Flexural Strength | MPa | >350 |
| Warpage | length‰ | ≤2‰ |
