Silicon carbide (SiC) ceramic crystal boats are important components used in the manufacturing processes of semiconductors and solar cells. They are made of high-purity silicon carbide ceramics and feature excellent high-temperature resistance, corrosion resistance, wear resistance and high thermal conductivity. They can withstand harsh environments such as high temperatures, high pressures and plasma, and are not prone to deformation, ensuring long-term stable operation.

The Advantages of Using Ceramic Wafer Boat :

1.Very high Temperature Resistance to 3000 F ( 1650? ?

2. Super corrosion resistance to  acids, solvents, salts, and organics, wear resistant  

3. Easy to clean

4. Strong impact resistance

5. Slip Free

Different Models of ceramic wafer boat :

The semiconductor manufacturing industry typically processes these wafers in either horizontal or vertical carriers. The horizontal carrier, typically called a "boat", has three or four horizontally disposed bars arranged in a semicircle design, with each bar having inwardly facing grooves set therein at regular intervals. Each set of grooves define a vertical space for carrying a vertically disposed wafer. The vertical carrier, typically called a "vertical rack", has three or four vertically disposed rods (or posts) arranged in a semicircle design, with each post having slots set therein at regular intervals to define a space for supporting a horizontally disposed wafer. To insure the geometrical precision required in this field, the three or four rods are fixed to a top plate and a bottom plate. The portions of the post between each slot, termed "teeth", are identically spaced in order to support wafers at regular intervals from and parallel to the bottom plate. The entire rack is then placed within a vertical furnace for processing the wafers.

Because a wafer processed on a vertical rack experiences less of a temperature gradient over its face (as compared to a wafer processed in a horizontal boat), semiconductor manufacturers are increasingly turning to vertical furnaces. There is, however, a drawback to vertical furnacing. The wafers disposed on a conventional vertical rack are supported at their outside edge only. As such, the areas of the wafer resting on these teeth experience higher stress than the rest of the wafer. When temperatures in the furnace exceed about 1000°C, these stresses often become significant and portions of the single crystal wafer move relative to each other along crystallographic plates in response to that stress. This phenomenon, called "slip", effectively destroys the value of the semiconductor devices located in the area of the wafer where slip has occurred.