The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels

The ALD212900 features exceptional matched-pair device characteristics. The Gate Threshold Voltage (VGS(th)) is precisely set at 0.00V +0.01V, with an IDS of +20µA at VDS = 0.1V and a typical offset voltage as low as +0.001V (1mV).

The MOSFETs are versatile and can be used for switching and amplifying applications in systems with supply voltages ranging from +0.1V to +10V (+0.05V to +5V). The device is well-suited for applications requiring low input bias current, low input capacitance, and fast switching speed. The device exhibits enhancement mode characteristics at VGS > 0.00V while operating in the subthreshold voltage region with conventional depletion mode characteristics at VGS < 0.00V. The capabilities are further highlighted by a high input impedance of 2.5 x 10¹⁰?, low RDS(ON) of 14?, and a dynamic operating current range spanning about eight orders of magnitude.

Features & Benefits:

• Zero Threshold™ Gate Threshold Voltage of 0.0V ± 0.01V
• Operating voltage as low as 100mV, operating power as low as 1nW, and output current as high as 50mA
• Over 100,000,000:1 operating current ranges
• Operating current as low as 1nA
• Low input capacitance and leakage currents
• Sub-Threshold voltage (nano-power) operation
• High Input Impedance: 2.5 x 10¹⁰?
• Low RDS(ON) of 14?
• Operates in Enhancement and Depletion Modes

Available to order at Digi-Key and Mouser (product numbers ALD212900SAL, ALD212900PAL) in 8-pin SOIC and Plastic DIP packages starting at $4.75 each per 100.