The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V.

With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant and suitable for applications requiring reliable performance over a wide operating temperature range from -65°C to 200°C, making it ideal for industrial, automotive, and embedded electronics.

Engineers and buyers benefit from its robust specifications, surface-mount form factor, and lead-free compliance, enabling compact designs with dependable electrical performance.

Key Features & Benefits

• High Collector Current: Up to 600mA for demanding switching applications.

• Voltage Rating: 60V collector-emitter breakdown for robust operation.

• Low Saturation Voltage: 1.6V max, improving efficiency.

• DC Current Gain: Minimum 100, ensuring reliable amplification.

• Wide Temperature Range: Operates from -65°C to 200°C.

• Surface-Mount Package: Compact 3-SMD no-lead design for modern PCB layouts.

• RoHS Compliant: Lead-free and environmentally friendly.