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The benefits of using 4th Generation SiC MOSFETs

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The benefits of using 4th Generation SiC MOSFETs-Image

Application benefits of using 4th Generation SiC MOSFETs
ROHM has released the 4th generation of SiC MOSFETs. It has achieved a 40% reduction in on-resistance and a 50% reduction in switching loss compared to the 3rd generation. This article describes an experimental test using a step-down DC-DC converter with 500V input voltage and 7kW power, a simulated running test using an EV traction inverter with 800V input and 100kW, and an experimental test using a Totem-pole PFC circuit.

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