Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a continuous drain current of 320mA, it provides reliable performance in diverse environments. The BSS138PW,115 is available in a SOT-323-3 package, making it suitable for SMD (SMT) mounting.

Key Features:

• Type: N-Channel MOSFET
• Technology: MOSFET
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 320mA (Ta)
• Gate-Source Threshold Voltage: 1.5V @ 250μA
• Max Gate Charge: 0.8nC @ 4.5V
• Max Input Capacitance: 50pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
• Maximum Rds On: 1.6 Ohm @ 300mA, 10V
• Temperature Range - Operating: -55°C to 150°C (TA)
• Package: SOT-323-3 (SC-70, SOT-323)

Applications:

• Portable electronic devices
• Battery-powered applications
• Industrial control systems
• Consumer electronics

For more details, refer to the BSS138PW,115 datasheet.