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BSS138PW,115 | N-Channel 60V 320mA MOSFET

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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a continuous drain current of 320mA, it provides reliable performance in diverse environments. The BSS138PW,115 is available in a SOT-323-3 package, making it suitable for SMD (SMT) mounting.

Key Features:

  • Type: N-Channel MOSFET
  • Technology: MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 320mA (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 0.8nC @ 4.5V
  • Max Input Capacitance: 50pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
  • Maximum Rds On: 1.6 Ohm @ 300mA, 10V
  • Temperature Range - Operating: -55°C to 150°C (TA)
  • Package: SOT-323-3 (SC-70, SOT-323)

Applications:

  • Portable electronic devices
  • Battery-powered applications
  • Industrial control systems
  • Consumer electronics

For more details, refer to the BSS138PW,115 datasheet.