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N-Channel MOSFET | BSS138NH6327XTSA2

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Infineon Technologies BSS138NH6327XTSA2 Overview

  • N-Channel MOSFET: Suitable for various applications requiring efficient power switching.
  • 60V Drain-Source Breakdown Voltage: Capable of handling high voltages.
  • 230mA Continuous Drain Current: Ensures reliable operation under moderate loads.
  • 1.4V Gate-Source Threshold Voltage: Low gate drive requirement enhances efficiency.
  • 1.4nC Max Gate Charge: Quick switching capability for high efficiency.
  • PG-SOT23-3 Package: Compact surface-mount package ideal for space-constrained designs.
  • Wide Temperature Range: Operates in temperatures ranging from -55°C to 150°C.

Key Features

  • High Voltage Rating: Supports applications with up to 60V.
  • Moderate Current Handling: Continuous drain current of 230mA.
  • Low Gate-Source Threshold Voltage: Efficient operation with low gate drive voltage.
  • Quick Switching Speed: Fast response time with 1.4nC gate charge.
  • Compact SMD Package: Space-saving PG-SOT23-3 package.
  • Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Applications

  • Power Supplies: Efficient switching in power supply circuits.
  • Motor Control: Drive circuits for small motors and actuators.
  • High Power Applications: Suitable for applications requiring high power handling.
  • Battery Management: Efficient switching in battery-powered devices.
  • LED Lighting: Control circuits for LED drivers.
  • Consumer Electronics: Reliable switching in various consumer electronic devices.

Technical Specifications

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 230mA
  • Gate-Source Threshold Voltage: 1.4V @ 26μA
  • Max Gate Charge: 1.4nC @ 10V
  • Max Input Capacitance: 41pF @ 25V
  • Power Dissipation (Max): 360mW (Ta)
  • Temperature Range - Operating: -55°C to 150°C

Ordering Information

The BSS138NH6327XTSA2 MOSFETs are supplied in 3,000 unit tape and reel packaging, suitable for automated assembly processes.

For detailed product specifications, technical data, and application notes, please refer to the datasheet provided by Infineon Technologies.