Silicon carbide (SiC) power electronics are revolutionizing electrical systems in high power applications. This webinar describes how to use SiC power modules to build a 300 kW inverter in an enclosure that is roughly the size of a shoebox.
We will consider the system parameters for a 300kW inverter, then walk through the electrical, thermal/mechanical and cost benefits of using SiC MOSFET modules vs. traditional silicon MOSFET modules.
Next, we will further-optimize the inverter
using multiple versions of SiC modules to showcase when to use a conduction-optimized
- Learn the fundamentals of silicon carbide power modules.
- Learn how to build a 300KW inverter using SiC
- Understand how to optimize a system around silicon carbide
- Understand benefits to
- Understand benefits to using switching-optimized modules
Dr. Daniel Martin is the manager for Power Module Applications where his team supports power module integration through the development of application notes, gate drivers, and evaluation kits. He has utilized high-speed SiC and GaN devices in power electronic systems for more than years. His experience utilizing SiC in a variety of applications has enabled insight into device behavior, optimized power module packaging, optimal gate driver control/design, and system level optimization to fully enable the utilization of SiC devices.