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Upcoming Webinar:

Revolutionizing Inverter Power Density using SiC MOSFET Modules

Silicon carbide (SiC) is revolutionizing system sizes and reducing costs in high power applications. This webinar describes how to use SiC power modules to build a 300 kW inverter in an enclosure that is roughly the size of a shoebox. We will demonstrate how to optimize system level design using both conduction and switching optimized modules depending upon the application.



Date: December 16, 2019
Time: 11 AM EST (8 AM PST / 5:00 PM CET)
Duration: 1 hour
Presented by:

Overview

Silicon carbide (SiC) power electronics are revolutionizing electrical systems in high power applications. This webinar describes how to use SiC power modules to build a 300 kW inverter in an enclosure that is roughly the size of a shoebox.

We will consider the system parameters for a 300kW inverter, then walk through the electrical, thermal/mechanical and cost benefits of using SiC MOSFET modules vs. traditional silicon MOSFET modules.

Next, we will further-optimize the inverter using multiple versions of SiC modules to showcase when to use a conduction-optimized vs. when to use a switching-optimized module depending upon the application. After selecting the proper module, we will demonstrate how to optimize the system parameters to extract the highest efficiency while minimizing system costs.

Key Takeaways

  • Learn the fundamentals of silicon carbide power modules.
  • Learn how to build a 300KW inverter using SiC
  • Understand how to optimize a system around silicon carbide
  • Understand benefits to using conduction-optimized modules
  • Understand benefits to using switching-optimized modules

Speaker

Dr. Daniel Martin, Power Module Applications Manager, Wolfspeed

Dr. Daniel Martin is the manager for Power Module Applications where his team supports power module integration through the development of application notes, gate drivers, and evaluation kits. He has utilized high-speed SiC and GaN devices in power electronic systems for more than years. His experience utilizing SiC in a variety of applications has enabled insight into device behavior, optimized power module packaging, optimal gate driver control/design, and system level optimization to fully enable the utilization of SiC devices.