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On-Demand Webinar:

Optimizing GaN HEMT Performance with the Right Gate-Driving Solution

Discover various driving solutions, ranging from a dedicated driver for Infineon's gallium nitride (GaN) based CoolGaN™ GIT high electron mobility transistors (HEMTs) to a universal drive concept addressing the different GaN technologies. Practical application examples and circuit schematics will complement the presentation.




Date: March 30, 2023
Time: 9 AM EDT (6 AM PDT / 3:00 PM CEST)
Duration: 1 hour
Presented by:

Overview

Suppose you want to get best performance in your GaN design. In that case, it is vital to understand the similarities and differences between the various GaN power transistors and their silicon counterparts.

Today we can find three different GaN switch concepts in the 600 V arena:

  • Classic Cascode
  • p-GaN Schottky
  • p-GaN ohmic (Normally-off) GaN transistors

To fully utilize the advantages of each concept, you need to be aware of the key gate driver requirements for the used solution, as they require different approaches.

In this webinar, we will provide an overview of the different GaN concepts and focus on the p-GaN ohmic switch concept, which is the most promising in terms of Figure-of-Merit (FOM) and reliability.

Get to know the gate drive requirements for Infineon’s CoolGaN™ gate injection transistor (GIT) technology, which is based on a hybrid-drain high electron mobility transistor (HEMT) with a p-GaN gate. Various driving solutions are discussed, ranging from a dedicated driver for CoolGaN™ GIT HEMTs to a universal drive concept addressing the different GaN technologies.

Practical application examples and circuit schematics will complement this presentation.

Getting ready for the webinar:

Browse Infineon's portfolio of Gate Driver ICs for GaN GIT HEMTs - Click Here

Discover Infineon's GaN technology and GaN HEMTs offering - Click Here

Check out Infineon's GaN HEMT community / forum - Click Here

Key Takeaways

  • Understand the similarities and differences of GaN power transistors compared to their silicon counterparts
  • Discover the key gate driver requirements for different GaN concepts
  • Explore possible gate drive concepts

Speakers

Carmen Menditti Matrisciano, Application Engineer, Infineon Technologies

Carmen Menditti Matrisciano is an application engineer working in the technical marketing team for the product segment Isolation ICs and is responsible for defining the best-in-class Gate Driver ICs, driving the go-to-market activities, and providing technical product support to customers around the world. She holds a B.S. and an M.S in electronic engineering from the University of Naples, Italy. She can be reached at Carmen.MendittiMatrisciano@infineon.com.

LinkedIn profile: https://www.linkedin.com/in/carmen-menditti-192b5714b/

Rolf Horn, Applications Engineering, Digi-Key Electronics

Applications engineer, Rolf Horn, has been in the European Technical Support group since 2014 with primary responsibility for answering any development and engineering related questions from customers in EMEA, as well as writing and proof-reading German articles and blogs on DK’s TechForum and maker.io platforms. Prior to Digi-Key, he worked at several manufacturers in the semiconductor area with focus on embedded FPGA, microcontroller and processor systems for industrial and automotive applications. Rolf holds a degree in electrical and electronics engineering from the University of Applied Sciences in Munich, Germany, and started his professional career at a local electronics products distributor as system-solutions architect to share his steadily growing knowledge and expertise as trusted advisor to recommend electronic components.

LinkedIn profile: https://www.linkedin.com/in/rolf-horn-b25037142/