Join our webinar to discover how ST’s STDRIVE GaN gate drivers unlock the full potential of GaN power devices. We will introduce the STDRIVE portfolio for GaN HEMTs and explain the key driving requirements to achieve highest efficiency, power density, and compact designs in real-world applications.
Overview
In today’s advanced power conversion and motion control applications, the demand for higher efficiency, miniaturization, and lower system cost is accelerating the adoption of GaN devices. The STDRIVE GaN driver series is specifically engineered to unlock the full potential of GaN HEMTs, with features such as precise gate voltage control, tunable dV/dt, and high-speed gate driving that go beyond the capabilities of traditional MOSFET and IGBT drivers.
This webinar explains the key challenges of driving GaN – including managing very fast switching transitions, avoiding undesired turn-on, handling higher reverse conduction voltage, and meeting tighter timing constraints – and shows how STDRIVE helps overcome them. You will see how STDRIVE enables efficient, low-EMI, heatsink-less motor drives and power converters with fast startup and stable burst-mode operation, supporting a smooth and confident transition from silicon-based devices to GaN technology.
Key Takeaways
- Tackle GaN’s fast-switching challenges to reduce EMI and ensure robust system protection
- Enhance motor control and power conversion with accurate, high-speed gate driving
- Smoothly transition from silicon to GaN using optimized, application-ready driver solutions
Speakers
Carolina Selva is Product Unit Manager responsible for the Gate Drivers products family in the Application Specific Products Division, including galvanic isolated gate drivers and specific solution for the wide bandgap SiC and GaN power switches addressing Energy, Industrial and Automotive markets. Carolina holds a Master of Science degree in Electronic Engineering from the Polytechnic of Milan.
Fabio Fabbri is an Application Engineer at STMicroelectronics specializing in monolithic gate drivers and GaN- or MOS-based System-in-Package solutions. With 10 years of experience at ST, he has been involved in specifying, developing, validating, and supporting customers for monolithic and galvanically isolated gate drivers for MOSFETs, IGBTs, SiC, and GaN devices, both in discrete and System-in-Package formats. Fabio graduated in Electronic Engineering from Bologna University and holds a Master of Science in Embedded System Design from Università della Svizzera Italiana.
Rosario Attanasio is an application engineering manager at STMicroelectronics for the Americas region, focusing on motor control, offline power supplies and lighting applications. Prior to covering this position, he served as a senior application engineer at STMicroelectronics, Italy. Rosario graduated from University of Catania in 2003 and received a PhD in electrical engineering from the same university in 2006.