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Choosing between Si, SiC and GaN: Which High-Voltage Power Transistor is Best for Your Application?

Today, there are more options for power transistors than ever before. This can make it challenging to understand the differences between them, and decide which technology makes the most sense for the application circuit you are designing. This webinar explains the different technologies and their key attributes, and shows you how these differences matter for common example applications. The goal is to help you understand the tradeoffs between these technologies, and how to best balance the needs for performance and cost.




Date: September 17, 2026
Time: 9 AM EDT (6 AM PDT / 3:00 PM CEST)
Duration: 1 hour
Presented by:

Overview

Selecting the right power transistor technology has never been more important, or more challenging. Designers today can choose from a wide range of solutions, including silicon MOSFETs, IGBTs, and wide-bandgap technologies such as gallium nitride (GaN) and silicon carbide (SiC). While this variety creates exciting opportunities for improving efficiency, power density, and system performance, it can also make it difficult to determine which technology is the best fit for a specific application.

This webinar provides a practical overview of the major power transistor technologies available today and highlights the key parameters that differentiate them. We will review the operating characteristics of silicon, SiC, and GaN devices, while also examining how package selection, from traditional TO packages to modern top-side-cooled SMT packages, can influence overall system performance.

A key focus of the session is understanding why application requirements matter when evaluating transistor technologies. Topics such as hard- versus soft-switching operation, conduction losses, and switching-related performance metrics will be explored in the context of real-world designs.

By the end of the webinar, attendees will be better equipped to select the optimal transistor technology and package for their specific design requirements while achieving the best balance of performance, efficiency, and cost.

Key Takeaways

  • Understand the differences between Si, SiC, and GaN power transistor technologies
  • Learn how transistor packaging impacts performance
  • Discover how application requirements drive technology selection

Speaker

Eric Persson, Senior Principal Engineer, Infineon Technologies

Eric Persson joined Infineon in 2000 and gained professional experience in different roles. Currently, he is working as a senior principal engineer. He has presented more than 100 seminars, tutorials and papers on topics related to applications and practical design aspects of power electronic circuits. He is a regular lecturer for power electronic short-courses at UW Madison where he has been adjunct faculty since 2001. Mr. Persson holds 19 patents and is a recipient of the IEEE Third Millennium Medal.