Meet the S16495 silicon photodiode, designed for high-sensitivity detection at 310 nm. Its compact, leadless ceramic package ensures easy integration, ideal for hydrogen and UVB detection. Experience precise measurements and enhanced performance across industrial and environmental applications, showcasing Hamamatsu's dedication to developing advanced photonics solutions for your needs. Read more...
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Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm. Read more...
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Uncover new possibilities with the G15978-0020P InGaAs photodiode from Hamamatsu Photonics. Its compact design, low dark current, and peak sensitivity at 1550 nm is engineered for low-light applications. Embrace reliable innovation without damaging your sustainability efforts for your next project, with this advanced sensor! Read more...
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN photodiodes: compact, surface-mounted NIR sensors with low dark current designed for infrared applications, including gas sensing, laser application, and remote temperature sensing. Read more...
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