-
Description: Ceramic wafer clamps are indispensible tools in semiconductor processing. They can be manufactured of high-purity alumina, zirconia, or silicon carbide, making them suited for high-temperature and corrosive environments.
- Features: Alumina / Aluminum Oxide, Specialty Ceramic
- Applications: Electrical / HV Parts
- Specialty Ceramic Type: Silicon Carbide, Tungsten Carbide (WC), Zirconia
- Shape / Form: Wafer Carrier / Holder
-
Supplier: 3X Ceramic Parts Company Limited
Description: Slip Free Ceramic Slot Boat for Wafer Carrier The slip free ceramic slot boat vertical carriers or boats for holding semiconductor wafers during heat processing and is particularly concerned with a vertical carrier designed to effectively support large semiconductor wafers
- Density: 5.99999621323765 g/cc
- Compressive / Crushing Strength: 290,073.678714394 psi
- Features: Specialty Ceramic
- Specialty Ceramic Type: Zirconia
-
Supplier: 3X Ceramic Parts Company Limited
Description: High Precision Zirconia Ceramic Wafer Support Loader Zirconia Ceramic Wafer Carrier Support is highly precision machinind by flapping machine and CNC machined . It is used on the photovaltaic equipment machine to carry the wafer in semiconductor industry . Zirconia ceramic
- Density: 6.019996200615109 g/cc
- Thermal Conductivity: 2 W/m-K
- MOR / Flexural Strength: 174,044.2072286364 psi
- Compressive / Crushing Strength: 362,592.0983929925 psi
-
-
Supplier: 3X Ceramic Parts Company Limited
Description: system DOA equipment integrated wafer loading & unloading, unloading the wafers from the Ceramic boat to the cassette or loading the wafers from the cassette to the ceramic boat. Available for double back-to-back wafers in one slot which realize single side diffusion or
- Density: 5.99999621323765 g/cc
- Thermal Conductivity: 2.5 W/m-K
- MOR / Flexural Strength: 116,029.4714857576 psi
- Compressive / Crushing Strength: 290,073.678714394 psi
-
Supplier: 3X Ceramic Parts Company Limited
Description: Zirconia Ceramic Wafer Carrier Support Plate Ceramic Wafer Carrier Support Plate is made of zirconia ceramic material , this is because zirconia ceramic surface is more smooth after polished , its roughness could reach to below Ra 0.1, so it is more easy to clean . Also this material
- Density: 6.019996200615109 g/cc
- Compressive / Crushing Strength: 319,081.0465858334 psi
- Shape / Form: Fabricated / Custom Shape
- Features: Specialty Ceramic
-
Supplier: CoorsTek
Description: Abrasives Household durables Furnaces Semiconductor equipment Lighting Electronic equipment Many more Ceramic tubes and rods can be used in a multitude of applications. Sample applications include: Turbine casting supports Surgical devices Knife sharpeners Wafer processing components Ceramic
- Density: 2.8 to 6.02 g/cc
- Thermal Conductivity: 2.2 to 30 W/m-K
- MOR / Flexural Strength: 20,015.0838312932 to 130,533.155421477 psi
- Compressive / Crushing Strength: 79,770.2616464584 to 377,095.782328712 psi
Find Suppliers by Category Top
Featured Products Top
-
(AlN), zirconium oxide (ZTA), and silicon carbide (Si3N4) substrates. Multi-series product matrix, accurately matching diverse application needs Innovacera provides ceramic substrates made of different materials to meet different customer applications (read more)
Browse Ceramic Sheets and Boards Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd.
More Information Top
Indicates content that may require registration and/or purchase.
-
Hanford Atomic Products Operation monthly report, December 1954
Fuel elements consisting of four-inch uranium slugs, solid and cored, insulated from the aluminum Jackets with one to four mils of alumin_Am oxide and with zir- conium wafers on the ends, have been canned using the cold closure technique.
-
Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition
For Rh(111), Ir(111) and Ni(111), epitaxial TM films (thickness ∼ 150 nm) were grown on 4 inch Si(111) wafers via yttria-stabilized zirconium oxide buffer layers (YSZ, thickness ∼ 100 nm) by e-beam evaporation.
-
Idaho chemical programs annual technical report, fiscal year 1974
This fuel consists of sintered wafers of enriched uranium dioxide- zirconium oxide -calcium oxide clad in Zircaloy.
-
Bioactivity and cytocompatibility of zirconia (ZrO(2)) films fabricated by cathodic arc deposition.
Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma.
-
Nanoindentation, Modeling, and Toughening Effects of Zirconia/Organic Nanolaminates
Robust multilayer zirconium oxide (ZrO2)‐organic nanolaminates are deposited on Si wafers .
-
Fully Patterned Low‐Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis
The dielectric properties of the zirconium oxide layer were characterized in stacked capacitor devices featuring a highly doped Si wafer as back electrode and Au top contacts.
-
Process monitoring and control of integrated-circuit manufacturing using Fourier transform infrared spectroscopy
… silicon, amorphous silicon, shallow junction silicon, silicon oxide, silicon nitride, amorphous silicon nitride, boron-phosphor-silicate-glass (BPSG), barium titanate (BTO), yttrium barium copper oxide (YBCO), and yttrium stabilized zirconium (YSZ) films, as well as patterned IC wafers , were first measured and …
-
Surface Layer‐by‐Layer Chemical Deposition Reaction for Nanosized Thin‐Film Formation of Metal Complexes of 2‐Mercaptonicotinic Acid
als.[14,15] Alternative deposition of oppositely charged linear polymers was also reported for the development of PDA- based chemosensors in layered PDA systems.[16] Zirconium oxide films were produced by … … LBL adsorption of diluted zirconium alkoxide solutions onto a silicon wafer .
-
Safety Analysis Report for Packaging (Onsite) Multi Canister Overpack Cask
The wafers have a pyrolytic carbon coating that prevent the zirconium from reacting chemically with the uranium oxide .
-
Hanford spent fuel inventory baseline
The wafers have a pyrolytic carbon coating which prevented the zirconium from reacting chemically with the uranium oxide (BAPL 1962). mirror images.