Help with Field-Programmable Gate Arrays (FPGA) specifications:
Density
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System Gates: | The total number of logic gates in the device. | ||
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Logic Cells / Logic Blocks | The number of logic cells in the device. Logic cells (LC) are blocks or modules inside the chip, not including the I/O blocks. They generally contain a look-up table to generate any function of inputs, a clocked latch (flip-flop) to provide registered outputs, and control logic circuits for configuration purposes. They are also knows as logic array blocks (LAB), logic elements (LE) and configurable logic blocks (CLB). | ||
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Registers: | The total number of shift registers in the device. | ||
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Look-Up-Tables (LUTs) | The number of look-up tables (LUT) available in the device. Look-up tables are truth tables used to implement a single logic function by storing the correct output logic state in a memory location that corresponds to each particular combination of input variables. | ||
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Chip Characteristics
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IC Package Type | |||
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PBGA | Plastic ball-grid array (PBGA) is the general terminology for the BGA package adopting plastic (epoxy molding compound) as the encapsulation. According to JEDEC standard, PBGA refers to an overall thickness of over 1.7mm. | ||
TBGA | Tape ball-grid array (TBGA) uses a fine, polyimide substrate and provides good thermal performance with high pin counts. | ||
SBGA | Super ball-grid array (SBGA) provides a high-power BGA package with a very low profile. With SGBA, the IC is directly attached to an integrated copper heatsink. Since the IC and I/O are on the same side, signal vias are eliminated, providing a significant improvement in electrical performance (inductance). | ||
FLGA | Fine-pitch land-grid array (FLGA) is extremely compact and lightweight, making it suitable for miniature disc drives and digital cameras. | ||
QFP | Quad flat packages (QFP) contain a large number of fine, flexible, gull wing shaped leads. Lead width can be as small as 0.16 mm. Lead pitch is 0.4 mm. QFPs provide good second-level reliability and are used in processors, controllers, ASICs, DSPs, gate arrays, logic, memory ICs, PC chipsets, and other applications. | ||
LQFP | Low quad flat package (LQFP). | ||
TQFP | Thin quad flat package (TQFP). | ||
PQFP | Plastic quad flat package (PQFP). | ||
SOP | Small outline package (SOP) | ||
SOIC | Small outline integrated circuit (SOIC). | ||
TSOP, Type I and II | Thin small outline package (TSOP) is a type of DRAM package that uses gull wing shaped leads on both sides. TSOP DRAM mounts directly on the surface of the printed circuit board. The advantage of the TSOP package is that it is one-third the thickness of an SOJ package. TSOP components are commonly used in small outline DIMM and credit card memory applications. Thin small outline package may be Type I or Type II. | ||
SSOP | Shrink small outline package (SSOP). | ||
TSSOP | Thin shrink small outline L-leaded package (TSSOP). | ||
TVSOP | Thin very small outline package (TVSOP). | ||
SOJ | Small outline J-lead (SOJ) is a common form of surface-mount DRAM packaging. It is a rectangular package with J-shaped leads on the two long sides of the device. | ||
HSOF | Small outline flat-leaded package with heat sink (HSOF). | ||
PLCC | Plastic leaded chip carrier (PLCC). | ||
LCCC | Leadless ceramic chip carrier (LCCC). | ||
PDIP | Plastic dual in-line package (PDIP) is widely used for low cost, hand-insertion applications including consumer products, automotive devices, logic, memory ICs, micro-controllers, logic and power ICs, video controllers commercial electronics and telecommunications. | ||
CDIP | Ceramic dual in-line package (CDIP) consists of two pieces of dry pressed ceramic surrounding a "DIP formed" lead frame. The ceramic / LF / ceramic system is held together hermetically by frit glass reflowed at temperatures between 400° - 460° centigrade. | ||
SIP | Single in-line package (SIP). | ||
SDIP | Shrink dual in-line package (SDIP). | ||
SZIP | Shrink zigzag in-line package (SZIP). | ||
Other | Other unlisted, specialized, or proprietary IC packages. | ||
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Logic Family | |||
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TTL | Transistor-transistor logic (TTL) is a class of digital circuits built from bipolar junction transistors (BJT), diodes and resistors. It is notable, as it was the base for the first widespread semiconductor integrated circuit (IC) technology. All TTL circuits operate with a 5 V power supply. TTL signals are defined as "low" or L when between 0 V and 0.8 V with respect to the ground terminal, and "high" or H when between 2 V and 5 V. The first logic devices designed from bipolar transistors were referred to as standard TTL. The addition of Schottky diodes to the base collector of bipolar transistor was called Schottky logic (S-TTL). Schottky diodes shorten propagation delays within TTL by preventing the collector from going into what is called “deep saturation.” Other TTL technologies include low-power Schottky (LS-TTL), advanced Schottky (AS-TTL), advanced low-power Schottky (ALS-TTL), and low-voltage TTL (LVTTL). | ||
FAST | Fairchild advanced Schottky TTL (FAST) technology was created in late 1970 when advances in IC technology allowed the speed and drive of S-TTL to be combined with the lower power of LS-TTL to form a new logic. An advanced related family is the FASTr, which is faster then FAST, has a higher driving capability (IOL, IOH), and produces much lower noise. The “r” in FASTr refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed. | ||
Standard CMOS / CMOS 4000 | Complementary metal-oxide semiconductor (CMOS) logic uses a combination of p-type and n-type metal-oxide-semiconductor field effect transistors (MOSFET) to implement logic gates and other digital circuits found in computers, telecommunications and signal processing equipment. It is the technology of choice for many present-day digital integrated circuits. CMOS 4000 refers to the series 4000 that is true CMOS with non-TTL levels. | ||
Fast CMOS | Fast CMOS technology (FCT) was introduced in 1986. With this technology the speed gap between CMOS and TTL was closed. Since FCT is the CMOS version of FAST, it has the low power consumption of CMOS but speed comparable with TTL. Advanced versions of the FCT standard are FCTx and FCTx-T. The x in FCTx and FCTx-T refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed. | ||
High-Speed CMOS | High-speed CMOS technology (HCMOS) is also known as HC / HCT. There are several basic flavors of HCMOS technology: high-speed CMOS (HC), high-speed CMOS with TTL input (HCT), advanced high-speed CMOS (AHC), and advanced high-speed CMOS with TTL inputs (AHCT). | ||
Advanced CMOS | Advanced CMOS is a much higher speed version of HCMOS. It is also known as AC / ACT. Advanced CMOS technology comes in different flavors: standard advanced CMOS (AC), advanced CMOS with TTL inputs (ACT), advanced CMOS with quiet outputs (ACQ), advanced CMOS with TTL inputs and quiet outputs (ACTQ), advanced ultra-Low voltage CMOS (AUC), advanced ultra-low power CMOS (AUP), advanced very-low voltage CMOS (AVC), advanced low voltage HCMOS (ALVC), and advanced low voltage CMOS with bus hold (ALVCH). ACQ / ACTQ are second generation Advanced CMOS with much lower noise. While ACQ has the CMOS input level, ACQT is equipped with TTL level input. | ||
Low Voltage CMOS | There are several low voltage CMOS technologies: standard low voltage (LV), low voltage high performance HCMOS (LVC), low voltage CMOS technology with TTL inputs (LVT), Low voltage with TTL inputs and high impedance (LVTC), advanced low voltage CMOS with bus hold (ALVCH), low voltage CMOS that operates with 3 V or 5 V (LCX), and low voltage CMOS that operates with 1.8 V or 3.6 V (VCX). | ||
BiCMOS | BiCMOS is a SiGe Bipolar technology that combines the high speed of bipolar TTL with the low power consumption of CMOS. There are a number of BiCMOS flavors including advanced BiCMOS technology (ABT), advanced BiCMOS technology with enhanced transceiver logic (ABTE), advanced low-voltage BiCMOS (ALB), advanced low-voltage BiCMOS technology (ALVT), BiCMOS with TTL inputs (BCT), BiCMOS with backplane and transceiver logic (BTL), and low-voltage BiCMOS technology (LVT). | ||
Emitter Coupled Logic (ECL) | Emitter coupled logic (ECL) uses transistors to steer current through gates that compute logical functions. By comparison, TTL and related families use transistors as digital switches, where the transistors are either cut off or saturated, depending on the state of the circuit. This distinction explains ECL's chief advantage: that because the transistors are always in the active region, they can change state very rapidly, so ECL circuits can operate at very high speed; and also its major disadvantage: the transistors are continually drawing current, which means the circuits require high power, and thus generate large amounts of waste heat. ECL gates use differential amplifier configurations at the input stage. A bias configuration supplies a constant voltage at the midrange of the low and high logic levels to the differential amplifier, so that the appropriate logical function of the input voltages will control the amplifier and the base of the output transistor. The propagation time for this arrangement can be less than a nanosecond. Other noteworthy characteristics of the ECL family include the fact that the large current requirement is approximately constant, and does not depend significantly on the state of the circuit. This means that ECL circuits generate relatively little power noise, unlike many other logic types that typically draw far more current when switching than quiescent, for which power noise can become problematic. ECL circuits operate with negative power supplies, and logic levels incompatible with other families, which means that interoperation between ECL and other designs are difficult. The fact that the high and low logic levels are relatively close mean that ECL suffers from small noise margins, which can be troublesome in some circumstances. | ||
Integrated Injection Logic (I2L) | Integrated injection logic (I2L) is based on bipolar transistor logic. It is commonly referred to as "I-square-L." | ||
Silicon on Sapphire (SOS) | Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is “grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. SOS is primarily used in military and space applications because of its inherent resistance to radiation. It has seen little commercial use to date because of difficulties in fabricating the very small transistors used in modern high-density applications. Problematically, the SOS process often results in the formation of dislocations from crystal lattice disparities between the sapphire and silicon. This leads to unusable wafers and drives up the production cost. | ||
Gallium Arsenide (GaAs) | Gallium arsenide (GaAs) is a compound semiconductor mixing the strength of two elements, gallium (Ga) and arsenic (As). Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has many uses including being used in some diodes, field-effect transistors (FETs), and integrated circuits (ICs). GaAs components are useful at ultra-high radio frequencies and in fast electronic switching applications. GaAs devices generate less noise than most other types of semiconductor components and, as a result, are useful in weak-signal amplification applications. Gallium arsenide is used in the manufacture of light-emitting diodes (LEDs), which are found in optical communications and control systems. Gallium arsenide can replace silicon in the manufacture of linear and digital ICs. Digital devices are used for electronic switching, and also in computer systems. | ||
Crossbar Technology (CBT) | Crossbar technology (CBT) enables a bus interface to function as a very fast bus switch, isolating the bus when the switch is open and offering very little delay when the switch is closed. Opening the switch provides circuit isolation (high impedance). Closing the switch provides a near-zero propagation delay through a 5-Ohm resistance. Bus switch technology is used in programmable logic devices (PLDs) for improved performance. Typically, CBT devices operate from 4.5 V to 5.0 V. CBT is also known as quick switch (QS), fast switch technology (FST), or Pericom Interface (PI5C). | ||
Gunning Transceiver Logic (GTL) | Gunning transceiver logic (GTL) is a standard for electrical signals in CMOS circuits that is used to provide high data transfer speeds with small voltage swings. | ||
Other | Other unlisted logic families. | ||
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Pin Count | Total number of pins in the package. | ||
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Performance
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Internal Frequency: | Internal frequency is the speed (in MHz) at which the device can perform operations or data transfers internally. Once the data is in the device, some type of processing (read, write, move, etc.) takes place. | ||
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User I/Os: | The total number of user I/O ports available. | ||
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Operating Temperature: | This is the full-required range of ambient operating temperature. | ||
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External Clocks: | The number of external clock (other than PLLs) that can be connected to the device. | ||
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PLL / DLL | Integrated phase-locked loops (PLL) and delay-locked loops (DLL) with clock-frequency-synthesis capabilities give designers the ability to use PLDs for system-on-chip applications. PLL and DLL clock multiplication also allows the designer to generate a high-speed internal clock for sampling data in DSP applications. DLLs and give designers greater control of clock frequencies used in an integrated design. This is vital for system integration because different parts of a system operate at different clock frequencies | ||
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Memory
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Size: | The total amount of memory (in bits or Mbits) in the PLD. | ||
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Memory Support: | |||
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CAM | Content addressable memory (CAM). | ||
EEPROM | Electrically erasable programmable read-only memory (EEPROM) is a type of PROM that can be erased electrically and then reprogrammed. | ||
FIFO | First in, first out (FIFO) memory is used in buffering applications between devices that operate at different speeds, or in applications where data must be temporarily stored for further processing. | ||
Flash | Flash is a form of electrically erasable, programmable, read-only memory (EEPROM) that can be erased and reprogrammed in blocks instead of one byte at a time. Flash memory is non-volatile, which means that it does not need a constant power supply in order to retain data. Flash offers extremely fast access times, low power consumption, and relative immunity to severe shock or vibration. Flash memory chips have a lifespan of approximately 100,000 write cycles - a fact that makes Flash unsuitable for use as computer main memory. Typically, Flash memory chips are used in portable or compact devices such as digital cameras, cell phones, pagers, and scanners. Flash memory chips are also used as solid-state disks in laptops and as memory cards for video game consoles. | ||
Dual-port RAM | Dual port random access memory (RAM). | ||
LIFO | Last-in, first-out (LIFO) memory. | ||
RAM | Random access memory (RAM) can be read from or written to in a nonlinear manner. RAM derives its name from the fact that any byte of memory can be accessed randomly instead of sequentially. RAM does not retain data in memory when power is removed. | ||
ROM | Read-only memory (ROM) contains pre-programmed data and is either unchangeable or requires a special operation to overwrite. ROM retains data in memory when power is removed. A photosensitive material is etched to hold the required bit pattern. | ||
Other | Other unlisted memory support types. | ||
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Power Characteristics
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Supply Voltage: | |||
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-5 V | The chip operates with -5 volts. | ||
-4.5 V | The chip operates with -4.5 volts. | ||
-3.3 V | The chip operates with -3.3 volts. | ||
-3 V | The chip operates with -3 volts. | ||
1.2 V | The chip operates with 1.2 volts. | ||
1.5 V | The chip operates with 1.5 volts. | ||
1.8 V | The chip operates with 1.8 volts. | ||
2.5 V | The chip operates with 2.5 volts. | ||
3 V | The chip operates with 3 volts. | ||
3.3 V | The chip operates with 3.3 volts. | ||
3.6 V | The chip operates with 3.6 volts. | ||
5 V | The chip operates with 5 volts. | ||
Other | Other unlisted supply voltages. | ||
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Operating Current | The minimum current needed for active chip operation. | ||
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Standby Current | The minimum current needed to maintain the chip while it is inactive. | ||
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Power Dissipation | The total power consumed by the device. | ||
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I/O Interfaces
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AGP | Accelerated Graphics Port (AGP) is an interface specification developed by Intel Corporation. AGP is based on PCI, but is designed especially for the throughput demands of 3-D graphics. Rather than using the PCI bus for graphics data, AGP introduces a dedicated point-to-point channel so that the graphics controller can directly access main memory. The AGP channel is 32 bits wide and runs at 66 MHz. This translates into a total bandwidth of 266 MBps, as opposed to the PCI bandwidth of 133 MBps. AGP also supports two optional faster modes, with throughputs of 533 MBps and 1.07 GBps. | ||
BLVDS | Bus low voltage differential signaling (BLVDS). | ||
CMOS | Complementary metal-oxide-semiconductor (CMOS). | ||
GTL | Gunning transceiver logic (GTL). | ||
GTL+ | Gunning transceiver logic plus (GTL+). | ||
HSTL | High speed transceiver logic (HSTL) technology includes HSTL Class I, HSTL Class II, HSTL Class III, HSTL Class IV, and others. | ||
LVCMOS | There are several versions of low voltage CMOS including LVCMOS 1.8, LVCMOS 2.5, LVCMOS 3.3, and others. | ||
LVDS | Low voltage differential signaling (LVDS). | ||
LVPECL | Low voltage positive emitter coupling logic (LVPECL). | ||
LVTTL | Low voltage transistor-transistor logic (LVTTL). | ||
PCI | Peripheral component interconnect (PCI) is a local bus standard developed by Intel Corporation. Most modern PCs include a PCI bus in addition to a more general ISA expansion bus. | ||
SSTL | Stub-series terminated logic (SSTL) technology includes SSTL2, SSTL3, SSTL2 Class I and Class II, SSTL3 Class I and Class II, and others. | ||
SSTV | Stub series terminated low-voltage logic (SSTV). | ||
TTL | Transistor-transistor logic (TTL). | ||
Other | Other unlisted drives. | ||
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