Tech Brief Explains the Phenomenon of High-Power Pulse Recovery in Gan LNAs
We are proud to announce a new technical brief discussing the phenomenon of high-power pulse recovery in GaN LNAs. 

The Gallium Nitride (GaN) high electron mobility transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs) in the microwave region, as the noise properties of GaN are similar to other semiconductor materials, most notably Gallium Arsenide (GaAs).

In many microwave systems, LNAs are subject to unwanted high input power levels such as jamming signals. One of the features of LNAs made from GaN is the ability to withstand these input power levels without the need for a limiter, due to the inherent robustness of the device. Indeed, this is one reason GaN LNAs are supplanting their GaAs counterparts since GaAs LNAs typically require a front-end limiter, which adds to the cost and degrades the performance of the LNA.

Download the tech brief to learn more >>

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Keeping these additional parameters in mind may help an engineer save time during the design cycle, save money during assembly, and enhance a product’s competitive advantage, leading to valuable contract wins.