RFMW Expert Product Pick: Qorvo UJ4SC075009B7S AEC-Q101 Qualified 750V, Gen 4 SiC FET

What made you select the Qorvo UJ4SC075009B7S as product to feature? How does this product differentiate from others and what value does it offer?

Qorvo‘s UJ4SC075009B7S is an AEC-Q101 Qualified 750 V, 9 m? Gen 4 SiC FET. Its distinctive stacked cascode circuit configuration integrates a normally-on SiC JFET alongside a Si MOSFET, resulting in a normally-off SiC FET device. The stacked design also creates more space for larger die allowing for lower RDS(on) performance in the same package size, and the 750V rating offers enhanced voltage transient margin over similar 600 – 650V rated devices. The gate-drive characteristics allows for the use of standard off-the-shelf gate drivers, requiring minimal redesign efforts when replacing Si IGBTs, Si superjunction MOSFETs, or other SiC MOSFETs. 

Packaged in a D2PAK-7L, the UJ4SC075009B7S boasts ultra-low gate charge and remarkable reverse recovery characteristics, making it an excellent choice for applications involving switching inductive loads and those requiring standard gate drive.

What are the key features/specifications of the Qorvo UJ4SC075009B7S?

• On-resistance (RDS(on)): 9 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery: Qrr = 338 nC
• Low body diode VFSD: 1.1V
• Low gate charge: QG =75 nC
• Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive

What are common markets/applications for the Qorvo UJ4SC075009B7S?

• EV charging
• PV inverters
• Switched-mode power supplies
• Power factor correction modules
• Motor drives
• Induction heating