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Supplier: Norton Abrasives
Description: Aluminum Oxide/Silicon Carbide Abrasive Blend portable snagging Type 11 cup wheel. Economical choice for grinding dirty, scale-covered castings, aluminum and other soft metals. Available with either full steel back bushing or standard back bushing. This product is part of
- Abrasive Grain Type: Aluminum Oxide, Silicon Carbide
- Grit / Micron Size: 16 # or Microns
- Grading / Grit System: ANSI - Bonded
- Applications: Dry Grinding
Description: matching or as matched sets of two bearings arranged back-to-back or in tandem. Applications Typical applications for bearings in the S70 .. W series include medium-high volume production machines such as: woodworking machines (fig. 2) transfer machines small machining centres
- Seals / Shielding: Double Shield
Supplier: Titan Tool Supply, Inc.
Description: to heat and cooling fluids. There are many epoxies that meet this criteria. We suggest you consult your experts in this area. USES: Special Lapps. Special De-Burring Tools. Special Diamond Wheels. Special Shaped Diamond Dressers for Aluminum Oxide or Silicon Carbide Grinding Wheels
- Type: Sheets / Rolls
- Abrasive Grain / Material Type: Diamond
- Grit Size: 60 to 1100
- Applications: Finishing / Deburring (Fine Grits), Polishing / Lapping (Very Fine Grits), Toolroom / Sharpening
Supplier: Mitsui Chemicals America, Inc.
Description: ICROS® TAPE is used to manufacture integrated circuits as a surface protective tape in the silicon wafer back-grinding process. Since this backgrinding wafer tape uses special adhesives which hardly transfer to the wafer surface, it can reduce production costs and eliminateShow More
Supplier: Bervina Ltd.
Description: offered in Silicone, Linatex, Rubber and Pu. Standard thickness is 6mm. Available length of coated in house made belts are from 330 mm to 980 mm. We offer you our vacuumed VFFS timing belts with different type of holes and shapes in the coating. Our fabrication includes tooth removal,
- T Pitches: T 5mm, T 10mm
- Belt Width: 0.9843 to 2.56 inch
- Belt Length: 17.91 to 36.22 inch
- Belt Material: Neoprene, Other Belt Material
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Wafer-Level Chip-Scale Packaging
With continuous evolvement in the bumping technologies, such as polymer re-passivated bump on pad (BoP), copper redistribution layer (RDL), front side molded copper post on the RDL, aggressive silicon back grinding , advanced solder alloys, and design know-how, WLCSP has expanded …
Device Fabrication for Data Storage, Semiconductor and MEMS Applications at the University of Alabama Microfabrication Facility
Once void-free electroplated vias are prepared, the process wafer is attached using an adhesive to a carrier wafer for silicon back grinding .
MRS Online Proceedings Library - Materials Aspects to Consider in the Fabrication of Through-Silicon Vias - Cambridge Journals Online
Once void-free electroplated vias are prepared, the process wafer is attached to a carrier wafer for silicon back grinding .
These contributions would in any case not be cor- rect because the assumption of a silicon back ground introduces an artificial boundary between dielectric and air.
Fast Melting and Refining of Recycled Silicon Powders from the Wafer Back Grinding Process for Solar Cell Feedstock
Back Grinding Silicon Powder, Recycling, Silicon Feedstock, Solar Cell .
Scientific.Net: Materials Science
Home > Back Grinding Silicon Powder .
The study of the resin-bond diamond wheel for IC silicon wafer nanoscale roughness back grinding
The paper researches the influence of domestic and imported resin diamond grinding wheel 1200# on the surface grinding quality of the back ground silicon wafer, the detection methods of the silicon wafer's subsurface damage depth and roughness and the detection data of …
On the other hand, cross sectioning or silicon grind back techniques take at best 4-6 hours for complete analysis.
New wafer-level-packaging technology using silicon-via-contacts for optical and other sensor applications
Since the silicon is Fig. 4 Silicon back - grinding and stress release by an etch step provides a low projZe Silicon-Glass-Sandwichwith low residual damage or stress in the silicon device layer.
Challenges in CMOS‐based images
The wa- fer thinning process consisting on P+ bulk silicon first back grinding and then chemically wet etched with a soft land- ing on epitaxial P-layer.