TABLE OF CONTENTS Possibility of the enhancement of the diffusion processes in semiconductors under the influence of the flow of the particles was predicted by W. Shokley [Shokley, W. (1957)]. He considered the thin irradiated layer of the semiconductor as a source of the vacancies and interstitial atoms. The flow of the vacancies, directed inwards the substrate, has to influence the diffusion of the substitution impurities.
Experimental acknowledgement of the W. Shockley's assumption was obtained by P.Baruch and co-workers [Baruch, P., Constantin, C. and Pfister, J. C. (1961), Pfister, J. C. and Baruch, P. (1963)] who investigated influence of the proton irradiation on boron, phosphorus and gallium diffusion in silicon. P-n junction was created in silicon by thermal diffusion of the impurities mentioned above; displacement of p-n junction under irradiation was controlled with the help of dyeing of the slanting-cut. For the control of the contribution of the thermal displacement of the p-n junction, irradiation was performed through masks (Fig. 1.3) so that not-irradiated region was always situated near the irradiated one (the control of the deepening, push-off effect [Baruch, P., Constantin, C. and Pfister, J. C. (1961), Shaw, D. (1973)]).
Because annealing of the samples during three hours at 1100 C did not...
