TABLE OF CONTENTS For the last 20 years, radiation defects in III V compounds (especially, in GaAs) have been studied quite intensively; however, one obstacle to studying radiation defects in detail in these compounds is the fact that the latter contain much higher concentration of impurities compared to Ge and Si [Lange, D. V. (1977)]. Several reviews have been so far published concerning these studies [Lang, D. V. (1977), Pons, D. and Bourgoin, J.C. (1985), Bourgoin, J. C., Bardeleben, H. J. and Stievenard, D. (1988), Warner, J. H. and Walters, R. J., Messenger, S. R. et al. (2004)]. All these reviews have been mainly devoted to basic issues in the production of radiation defects in III V compounds irradiated with neutrons, electrons, and gamma-ray quanta. In contrast, we are primarily interested in studies devoted to directed changes in semiconductor properties, especially by doping III V compounds with radiation defects. This section is based on the published results of studying of III V compounds doping by irradiation with light charged particles.
As it is known, the primary radiation defects are first of all intrinsic point lattice defects [Emtsev, V. V. and Mashovets, T. V. (1981)]. In III V compounds, there are eight types of simple different point defects; i.e., we have two types of vacancies (one type in each sub lattice, i.e. vacancies of A and B atoms), at least four types of interstitial defects (there are two types of interstitials which can be occupied either by atoms...
