Acme Chip, a reputable distributor, is proud to present the 2DB1188, a high-performance bipolar RF transistor manufactured by DIODES Incorporated. This PNP transistor is designed to meet the demanding requirements of RF circuit applications, providing engineers and technical professionals with a reliable and efficient solution.

Product Specifications:

• IC(max): 2000 milliamps
• VCEO: 32 volts
• fT: 120 MHz
• PD: 1000 milliwatts
• hfe: 180
• TJ: -55 to 150°C (-67 to 302°F)

Key Features:

1. High Current Capability: With a maximum IC of 2000 milliamps, the 2DB1188 offers excellent current handling capability, making it suitable for a wide range of RF circuit designs.

2. Wide Voltage Range: The VCEO rating of 32 volts ensures reliable operation across various voltage levels, providing flexibility in circuit design and application.

3. Impressive Frequency Response: With an fT of 120 MHz, this transistor enables fast switching and amplification, making it ideal for high-frequency RF applications.

4. Robust Power Dissipation: The 2DB1188 can handle up to 1000 milliwatts of power dissipation, ensuring stable performance even under demanding conditions.

5. High Gain (hfe): With an hfe value of 180, this transistor offers excellent amplification capabilities, enhancing signal integrity and overall system performance.

Applications:
The 2DB1188 transistor finds extensive applications in RF circuits, including but not limited to:

• RF amplifiers
• Oscillators
• Mixers
• Signal generators
• RF filters
• Wireless communication systems

With its exceptional specifications and reliable performance, the 2DB1188 is an ideal choice for engineers and technical professionals working on RF circuit designs. Trust Acme Chip to deliver high-quality components that meet your project requirements.

Contact Acme Chip today to learn more about the 2DB1188 transistor and explore our comprehensive range of electronic components for your industrial needs.