Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous generations.

Built on E Series superjunction technology, the SiHK050N65E features a typical on-resistance of just 0.048 Ω at 10 V, enabling higher power ratings for applications exceeding 6 kW. With 50 V additional breakdown voltage, it addresses 200-277 VAC inputs and complies with Open Rack V3 standards. The ultra-low gate charge of 78 nC produces an outstanding FOM of 3.74 Ω*nC, significantly reducing energy losses and helping meet titanium efficiency requirements.

Available in the PowerPAK® 10 x 12 package with Kelvin connection, this RoHS-compliant and halogen-free MOSFET offers enhanced durability with guaranteed overvoltage protection through 100% UIS testing.

For more details, contact New Yorker Electronics at 201-750-1171 or email sales@newyorkerelectronics.com.