GaN FETs in compact SMD packaging - CCPAK

Featured Product from Nexperia B.V.

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Bringing 20 years’ expertise in high-quality, robust SMD packaging to the GaN FET portfolio, we adopt proven technology to give industry-leading performance in a truly innovative package. CCPAK's copper-clip cascode design optimizes electrical and thermal performance, improves device reliability and reduces parasitic losses. Offered in both top-side (CCPAK1212i) and bottom-side cooled (CCPAK1212) package designs.

The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging. This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom.