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Featured Videos
When selecting a power semiconductor, engineers often focus on device parameters such as RDS(on), switching losses and efficiency. However, for wide-bandgap technologies like GaN and SiC, package selection can be just as important as the semiconductor itself. In this Quick Learning video, Jim Honea explains how package design influences thermal performance, power density, switching behaviour, EMI and overall system reliability. Learn why thermal management and package parasitics become increasingly critical as switching frequencies rise, and how advanced package technologies, including top-side cooling, help engineers unlock the full benefits of wide-bandgap devices. Discover how the right package can help maximize the performance potential of wide-bandgap power semiconductors.
In the latest Nexperia Explainers video, John explores our latest trench technology in automotive power MOSFETs, designed for the transition to 48V architectures from traditional 12V systems. Discover how it''s low RDS(on) enhances motor drive and DC/DC applications, while achieving superior performance in switching losses, voltage stability, and EMI emissions.
For more information, visit www.nexperia.com/MOS
The collaboration between Synapticon and Nexperia has led to the development of two landmark products: SOMANET Circulo and SOMANET Integro. These innovations show how the partnership has helped improve integrated motion technology, changing what cobots can do and creating new standards in the robotics industry.
SOMANET Circulo is the world''s first all-in-one servo drive designed specifically for cobots and robots, integrating certified functional safety, a braking system, and an encoder into a singular, compact solution. Its revolutionary design simplifies robotic arms'' assembly and integration process, offering a plug-and-play solution that eliminates the need for additional adjustments or components. This accelerates the development time for manufacturers and significantly reduces costs, making sophisticated robotic solutions more accessible.
We benchmark these technologies relating to important characteristics, like the forward voltage drop VF or reverse leakage currents IR and give insights into prominent rectifier applications like reverse polarity protection. Nexperia helps you to understand how specific data sheet parameter (VF, IR, trr, etc) come about and how you can select the right component for your design. Learn about: Basic semiconductor structure & different rectifier technologies Key technical parameters | Static and dynamic behavior of rectifier Technology benchmarking and advantages Application examples and use cases This webinar is useful for: Technical procurement Hardware & Design Engineering Component Engineering Distributor FAEs People interested in technology Students and researchers Register for more sessions at https://www.nexperia
The set-up shows the well established discrete solution - a combination of precision shunt regulators with power bipolar transistors in a current sink configuration. This linear regulation approach is used as an output stage prior to a boost stage and offers robust and sustainable operation of the LEDs. Nexperia''s power bipolar transistors in DPAK, the well-known MJD series, are very well suited for this application and, at the same time, offer the best price performance ratio in this segment.
Learn more: www.nexperia.com/pro
Watch this demo video that shows how Nexperia''s 200 V high-end hyperfast PNE series can make the difference in switch-mode power supplies by demonstrating the diodes'' performance in a DC-DC-converter.
Learn more: www.nexperia.com/rec
Explore more of these topics in-depth in our video series.
Scattering parameters help us determine the portion of the transmitted and reflected wave through the measurement of insertion loss and return loss. We will also explore how s-parameters are organized in a matrix in network theory.
Explore what''s inside Nexperia''s fully open-source motor driver evaluation kit - designed to make your testing process more efficient.
Join Aanas as he unboxes the kit, walks through its modular design, shows how quickly it sets up (just a USB-C charger), and demonstrates key features like current sensing, fault detection, and hall effect options. Whether you''re building a BLDC project from scratch or adapting an existing design, this kit gives you the freedom and files to make it your own.
Visit nexperia.com to order the kit & download the user manual.
https://www.nexperia
Visit www.we-online.com for components & to download the reference design.
https://www.we-onlin
Efficient power conversion is a critical requirement in
high-power, fast-switching applications such as servo drives, inverters, UPS,
and ESS. Nexperia''s 650 V discrete IGBTs portfolio, engineered for high
reliability and optimized performance in demanding environments. Based on
3rd-generation trench-gate and field-stop technology, these IGBTs offer low
turn-off losses, strong thermal performance, and a positive VCE(sat) temp
coefficient for safe paralleling. Available from 15 A to 75 A in TO247-3, TO220-FP,
and D2PAK packages, the portfolio provides efficient, robust solutions for
power electronics design. Learn more: https://www.nexperia
Nexperia CCPAK1212 & CCPAK1212i MOSFETs, now automotive-qualified
Paralleling MOSFETs in high-power systems like e-bikes, forklifts, and industrial tools can be challenging-especial
In this video, Aniket Kulkarni, Applications Engineer at Nexperia, explains how ASFETs (Application Specific MOSFETs) with dynamic current sharing solve these issues with:
- Tighter Vth distribution for more uniform switching
- Lower transconductance (gm) for softer current slopes
- Improved thermal stability (ZTC at ~10 A) to prevent runaway
- Reduced ΔID mismatch during switching
Live from PCIM 2026 provides an overview of Nexperia''s latest GaN evaluation and demonstration platforms, showcasing both low-voltage and high-voltage solutions designed to help engineers accelerate development and maximize performance. From low-voltage motor drive demonstrators to high-voltage Gen 2 GaN evaluation boards and a 4 kW totem-pole PFC reference design, discover how Nexperia''s GaN portfolio is enabling higher efficiency, greater power density, and faster design cycles across a wide range of power conversion applications.
Live from PCIM Europe 2026, showcasing Nexperia''s 1200 V SiC MOSFET evaluation board featuring automotive QDPAK packaging and explores how advanced packaging technologies are driving higher power density and efficiency in automotive power applications such as onboard chargers and e-compressors. The video also offers an exclusive first look at XS NexPack, Nexperia''s next-generation packaging technology designed to deliver even greater power density, thermal performance, and system-level efficiency for future power electronics designs.
In this video, IAV and Nexperia present the ONE Inverter concept, a new approach to electric vehicle (EV) high-voltage architectures, recorded live at PCIM Europe 2026. The concept demonstrates how a software-defined battery architecture can dynamically manage battery cells, enabling multiple functions to be combined within a single system. This reduces system complexity while improving efficiency and flexibility. A key enabler of the approach is bidirectional GaN technology, which allows efficient switching at battery cell level and makes the concept technically and economically viable. The demonstrator highlights how combining system expertise (IAV) with semiconductor innovation (Nexperia) can unlock new possibilities for next-generation electric mobility solutions.
Wide-bandgap semiconductors (WBG), including Gallium Nitride (GaN) and Silicon Carbide (SiC), are transforming modern power electronics design. As electrification accelerates across EVs, industrial systems, renewable energy, and data centers, engineers face growing demands for higher efficiency, power density, and thermal performance. Compared to traditional silicon, WBG materials enable significant performance improvements in high-power and high-frequency applications. Key benefits of WBG semiconductors: Faster switching speeds and reduced power losses Operation at higher voltages, frequencies, and temperatures Increased power density and overall system efficiency More compact and lightweight designs