Silicon Germanium (SiGe) rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. In this video Nexperia reviews the results of a 48V/12V-DC-DC high-frequency converter that utilizes this novel Silicon Germanium rectifier technology. Watch and learn about SiGe''s technical advantages that includes an enhanced safe operating area for high frequency converter applications.
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. We became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at high volume: 90 billion annually. Our extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in our own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has over 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
Nexperia''s automotive P-channel LFPAK56 MOSFETs further enhances our industry-leading portfolio of robust and reliable copper-clip packages. Providing design engineers with more flexibility and choice, the Power-SO8 footprint-compatible
Nexperia''s smallest MOSFET package DFN0606 provides the most minute DFN solution in today''s commonly used pitch size of 0.35 mm. An ideal replacement solution where space is paramount, this ultra-small package offers significant space efficiency whilst providing minimal efforts on assembly adjustment. Ultra-small footprint of 0.62 x 0.62 mm with both N- and P- Channel options.
Nexperia has announced a partnership with renowned automotive engineering consulting company, Ricardo, to produce a technology demonstrator for an EV inverter based on gallium nitride (GaN) technology.
GaN is the preferred switch for these applications as GaN FETs lead to systems with greater efficiencies at lower costs with improved thermal performance and simpler switching topologies. In automotive terms this means that the vehicle has a greater range - the major concern for anyone looking to buy an electric vehicle. GaN is now on the brink of replacing silicon based IGBTs and SiC as the preferred technology for the traction inverters used in plug-in hybrids or full battery electric cars.
As a global expert for high performance Power FETs, Nexperia now introduces high-voltage devices with GaN-on-Silicon FET technology. With devices at 650 V and ideally suited to automotive applications for vehicle electrification, and telecom and datacentre supplies, GaN-on-Si technology provides performance efficiency due to supreme switching, and volume-ready production due to manufacturing in existing silicon wafer fabs.
Nexperia's Schottky rectifiers in clip-bonded FlatPower (CFP) packages combine efficient power conversion and a space-saving design. They are available in three product groups to ensure the best fit for your design's requirements: Low VF rectifiers, ultra-low IR rectifiers and Trench Schottky rectifiers. For automotive, industrial, consumer and computing applications. To find out more visit: https://www.nexperia
Building on over 15 years experience in copper-clip package production, Nexperia enhances the market-leading LFPAK range with the addition of LFPAK88. Providing up to 48 times power density compared to wire bond alternatives, and the robust and reliable characteristics synonymous with Nexperia's LFPAK technology, LFPAK88 is ideally suited for high-power industrial applications. Also qualified to AEC-Q101 standards it provides the perfect solution for automotive power steering, reverse battery protection, and DC/DC conversion applications.
Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Device ruggedness is defined by the capacity of a device to sustain an avalanche current during an unclamped inductive load switching event. Join Andrew Berry as he explains this happening and the importance behind reading the MOSFET datasheet.
Nexperia's new automotive-grade AEC-Q101 MOSFETs are both rated for us up to 175°C and available in the AOI-compatible DFN2020 package. In a 2 mm x 2 mm package the 175°C offering makes them ideal for under the hood applications, whilst incorporating side-wettable flanks technology extends best-fit across a wide range of medium-power automotive applications.
For most design engineers traditional silicon FET datasheets are familiar documents outlining component performance. For applications that require high-power GaN FETs this can often require a different approach to the standard parameters and characteristics. In this quick learning session we review a typical Nexperia GaN FET datasheet, and explore the key values and tolerances for consideration.
When a MOSFET is selected for a high power designs, engineers often select a device based on its on-resistance. Lower on-resistance results in MOSFETs with lower power loss, which in turn indicates less heating and safer operation for the device. However, a MOSFETs ability to handle a larger current is not based on its on-resistance alone, but also its safer operating area (SOA) capabilities. Join Stein Nesbakk as he explains for which applications SOA is vital, but also how to achieve the balance between low RDS(on) and strong SOA.
As designs get smaller there is an increasing demand for MOSFETs to have high power capabilities in smaller packages. Reducing the size of components has a great impact on thermal management, as power dissipation must occur on smaller die sizes. With the release of our DFN2020MD-6 MOSFET package we address both challenges, offering 15x higher thermal performance in a 47% space efficient solution. Here we take a look at the evolution of small-signal MOSFET packages to gain a better understanding of thermal performance, focussing on simulation and measurement results.
Ever increasing vehicle electrification and connectivity leads to an increase in the amount of data which needs to be transferred in the car. ICs and PCB design play a crucial role in enabling this. In addition, new protocols such as CAN-FD or OPEN Alliance Ethernet accelerate this trend.
The challenge hardware engineers face is that as data rates increase, ESD robustness decreases. Additionally, system-level ESD robustness varies from IC to IC and may not fulfill demanding automotive requirements. To ensure performance and reliability at high data rates, Nexperia offers solutions to raise the system-level ESD robustness up to 30 kV.
For more information please visit https://www.nexperia
Nexperia''s TrEOS high-speed data line protection technology optimizes the three pillars of ESD protection:
capacitance for highest signal integrity
o Low clamping & trigger for enhanced system protection
o High robustness against ESD & Surge transients
An extensive portfolio with over 100 leading performance devices offer customizable configurations to meet all design requirements.
Nexperia applies almost two decades of copper-clip package expertise to high-voltage with the development of our surface-mount GaN package CCPAK. Watch the package in action in this half-bridge evaluation board.
Many high power applications require a MOSFET to operate at very high continuous current for normal operation and/or expected fault conditions. Nexperia MOSFETs show how high continuous current such as 380A in 5x6mm & 425A in 8x8mm can be achieved with LFPAK package as opposed to other packages such wire-bond where the limits are much lower.
In high power Applications, such as Motor Control, one MOSFET may not be enough - hence paralleling MOSFETs becomes a necessary solution. To achieve a reliable design that shares and stresses the devices equally, it is common to request semiconductor manufacturers to provide parts with matched threshold voltages. However, even with very tightly controlled production facilities there is an inevitable spread in the threshold voltage across the wafer. Any effort to provide matched Vth will require special screening and sorting that can result in yield loss, thus affecting the cost of the devices supplied. Nexperia have developed a new and unique MOSFET with improved current sharing capability when used in parallel which no longer relies on matched threshold voltages.
When designing bidirectional DC/DC converter circuits, soft and efficient switching is becoming more important in order to minimise switching losses, without adversely affecting EMC. In this demonstrator we are showing a high-frequency, high-power DC/DC converter using the latest generation 100V power MOSFETs from Nexperia, to demonstrate how our combination of latest silicon technology and copper-clip packaging can address these common issues. Featuring LFPAK88.
Silicon Germanium (SiGe) rectifiers deliver cutting-edge high efficiency, thermal stability and space-savings. Nexperia''s SiGe rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. Here we explain the novel technology of silicon germanium rectifiers and their advantages over other rectifier technologies.