Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. We became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at high volume: 90 billion annually. Our extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in our own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has over 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
As a global expert for high performance Power FETs, Nexperia now introduces high-voltage devices with GaN-on-Silicon FET technology. With devices at 650 V and ideally suited to automotive applications for vehicle electrification, and telecom and datacentre supplies, GaN-on-Si technology provides performance efficiency due to supreme switching, and volume-ready production due to manufacturing in existing silicon wafer fabs.
Nexperia's Schottky rectifiers in clip-bonded FlatPower (CFP) packages combine efficient power conversion and a space-saving design. They are available in three product groups to ensure the best fit for your design's requirements: Low VF rectifiers, ultra-low IR rectifiers and Trench Schottky rectifiers. For automotive, industrial, consumer and computing applications. To find out more visit: https://www.nexperia
Building on over 15 years experience in copper-clip package production, Nexperia enhances the market-leading LFPAK range with the addition of LFPAK88. Providing up to 48 times power density compared to wire bond alternatives, and the robust and reliable characteristics synonymous with Nexperia's LFPAK technology, LFPAK88 is ideally suited for high-power industrial applications. Also qualified to AEC-Q101 standards it provides the perfect solution for automotive power steering, reverse battery protection, and DC/DC conversion applications.
Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Device ruggedness is defined by the capacity of a device to sustain an avalanche current during an unclamped inductive load switching event. Join Andrew Berry as he explains this happening and the importance behind reading the MOSFET datasheet.
Nexperia's new automotive-grade AEC-Q101 MOSFETs are both rated for us up to 175°C and available in the AOI-compatible DFN2020 package. In a 2 mm x 2 mm package the 175°C offering makes them ideal for under the hood applications, whilst incorporating side-wettable flanks technology extends best-fit across a wide range of medium-power automotive applications.
For most design engineers traditional silicon FET datasheets are familiar documents outlining component performance. For applications that require high-power GaN FETs this can often require a different approach to the standard parameters and characteristics. In this quick learning session we review a typical Nexperia GaN FET datasheet, and explore the key values and tolerances for consideration.
When a MOSFET is selected for a high power designs, engineers often select a device based on its on-resistance. Lower on-resistance results in MOSFETs with lower power loss, which in turn indicates less heating and safer operation for the device. However, a MOSFETs ability to handle a larger current is not based on its on-resistance alone, but also its safer operating area (SOA) capabilities. Join Stein Nesbakk as he explains for which applications SOA is vital, but also how to achieve the balance between low RDS(on) and strong SOA.
As designs get smaller there is an increasing demand for MOSFETs to have high power capabilities in smaller packages. Reducing the size of components has a great impact on thermal management, as power dissipation must occur on smaller die sizes. With the release of our DFN2020MD-6 MOSFET package we address both challenges, offering 15x higher thermal performance in a 47% space efficient solution. Here we take a look at the evolution of small-signal MOSFET packages to gain a better understanding of thermal performance, focussing on simulation and measurement results.