The oxidation process of a silicon wafer is a crucial step in the production of semiconductor devices. This process is employed to create an insulating layer of silicon dioxide on the wafer’s surface, in order to protect and isolate the subsequent electronic components.

During the oxidation process, the silicon wafer is exposed to an oxygen-rich environment at high temperatures. The most commonly used method for oxidation is thermal oxidation, where the wafer is heated in a furnace or an oxidation chamber.

As the wafer is heated, oxygen molecules react with the silicon atoms on the wafer’s surface. This reaction leads to the formation of silicon dioxide (SiO2) through a chemical process known as the thermal oxidation of silicon. The silicon dioxide layer grows gradually and uniformly, as more silicon atoms combine with oxygen.

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