The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal amplification to switching tasks in consumer electronics.

Engineers and product designers can rely on the SMMBT3904LT3G to achieve robust and stable performance in both high-frequency applications and current amplification scenarios. Its high DC current gain (hFE) ensures efficient power handling, while the 300MHz transition frequency (fT) provides excellent high-frequency characteristics. Additionally, it is RoHS compliant, ensuring environmental safety and regulatory compliance.

Applications:

• Signal amplification in audio and video equipment

• Switching applications in consumer electronics

• Driver stages in amplifiers

• Linear amplification in telecommunications

• Control systems

The SMMBT3904LT3G is a perfect choice for engineers who need a reliable, compact transistor that supports high-frequency performance and current amplification. It meets global environmental standards and offers easy integration into automated assembly processes, making it a versatile solution for various electronic design needs.

Key Features:

• Device Type: NPN Bipolar Junction Transistor (BJT)

• Package: SOT-23 surface-mount package

• Collector-Emitter Voltage (Vceo): 40V

• Collector Current (Ic): 200mA

• DC Current Gain (hFE): High current gain for efficient amplification

• Transition Frequency (fT): 300MHz, excellent for high-frequency applications

• Complementary PNP Transistor: SMMBT3906LT3G for push-pull amplifier configurations

• RoHS Compliant: Yes, for environmental and regulatory compliance