ROHM Semiconductor USA, LLC

Utilizing SiC Schottky barrier diodes (SBD) instead of fast recovery diodes (FRD) in PFC circuits in power supplies improves efficiency during continuous mode operation.
ROHM's SCS3xxA series of 3rd generation SiC SBDs maintain the industry's lowest VF characteristics of its 2nd generation products while providing higher surge current resistance. Optimized for power supp... Read more...

More Product Announcements from ROHM Semiconductor USA, LLC
ROHM Semiconductor USA, LLC

Utilizing SiC Schottky barrier diodes (SBD) instead of fast recovery diodes (FRD) in PFC circuits in power supplies improves efficiency during continuous mode operation.
ROHM's SCS3xxA series of 3rd generation SiC SBDs maintain the industry's lowest VF characteristics of its 2nd generation products while providing higher surge current resistance. Optimized for power supp... Read more...

More Product Announcements from ROHM Semiconductor USA, LLC
Richardson RFPD

The simplest way to benefit from SiC diodes is as a drop-in replacement for a PFC boost diode. See how easy and beneficial it is in this short video.

Simply put, silicon carbide (SiC) outperforms silicon (Si) at higher voltages. Due to differences in material properties, SiC can be used to enable unipolar Schottky diodes for voltages where Si is restricted to bipolar device... Read more...

More Product Announcements from Richardson RFPD