Product Announcements:
Insulated Gate Bipolar Transistors (IGBT)

In standard through-hole packages, as for instance TO-220 or TO-247, each lead pad resembles a parasitic inductance. The TO-247 4pin package has an extra Kelvin emitter connection. This 4pin known also as Kelvin emitter terminal, bypasses the emitter lead inductance on the gate control loop, enhancing the IGBT's switching speed and decreasing the switching energy. Read more...

Highest current density up to 75 A 1200 V IGBT or 120 A 600 V IGBT copacked with a diode in TO-247 footprint, 20% lower Rth(jh), 15% better heat dissipation, fast clip assembly. Read more...

New 650V IGBTs Deliver Class-Leading Efficiency with Soft Switching Read more...

Vincotech 10-EZ066PA050SA-L855F38T

• Breakdown Voltage: 600V
• Nominal Chip Current Rating: 50A
• Trenchstop™ IGBT3 technology
• Standard industrial housing
• Optimized R_th(j-s)with Phase Change Material
• Built-in NTC
• Equivalent: IFX FS50R06W1E3_B11

Product details

... Read more...

Industry leading IGBTs in fully isolated TO-247 package Read more...

Leading IGBT technology for medium power applications Read more...

VINcoPACK E3: New Sixpack Packaged to Meet your Mid-Power Need

What about a new sixpack in low-profile package for motion control and UPS applications?
Vincotech's VINcoPACK E3 modules from Richardson RFPD are a low-profile package for mid-power inverters with sixpack configuration. These 1200 V power modules raise the performance bar with their superior efficiency an... Read more...

Engineered mainly for industrial drives, solar power and UPS applications, the low-profile VINco E3 package raises the performance bar with its enhanced power density and reliability. Read more...