Wolfspeed

Wolfspeed’s new CMPA2738060F GaN MMIC power amplifier covers both traditional and extended S-Band frequencies. It offers 60 W, 50 V, and a 0.5” square flange package for use in AESA radar systems. Read more...

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Richardson RFPD

The Wolfspeed CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. Read more...

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Richardson RFPD

The GTRA384802FC-V1 is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. They Asymmetrical Doherty transistor features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Read more...

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Richardson RFPD

The Wolfspeed GTVA101K42EV-V1 is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, high efficiency device in a thermally-enhanced package with bolt-down flange. Read more...

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Richardson RFPD

The NXP MRF24G300HSR5 is a 300 W CW GaN transistor optimized for industrial, scientific and medical (ISM) applications at 2450 MHz. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. Read more...

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Wolfspeed

Wolfspeed, a Cree Company, has extended its family of 50 V transistors and introduced an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implemen... Read more...

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