Product Announcements:
RF Transistors

The QPD1017 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 3.1 to 3.5 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.

ROHS compliant.

Evaluation boards are available upon request. Read more...

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free... Read more...

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN pac... Read more...

The Qorvo QPD1016 and QPD1016L are 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.

ROHS compliant.

Evaluation boards... Read more...

The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are a... Read more...

The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.

ROHS compliant.

Evaluation boards are available upon request. Read more...

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant. Read more...

Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer ampl... Read more...

Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operati... Read more...