Richardson RFPD

NXP’s discrete massive MIMO portfolio now covers all cellular frequency bands from 2.3 to 4.0 GHz, leveraging NXP’s latest proprietary GaN technology, manufactured in its new fab in Chandler, AZ. The portfolio includes driver and final stage transistors that enable base station designs that are smaller, lighter and easier to deploy and conceal in both urban and suburban areas. Read more...

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Qorvo

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and ac... Read more...

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Qorvo

The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 5.9 W at +48 V operation.
Lead free and RoHS compliant. Read more...

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Richardson RFPD

The Wolfspeed CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT). This single stage RF Transistor is internally matched to 50 Ohms on the input and output for ease of use. Read more...

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Richardson RFPD

CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities from DC to 15GHz. Read more...

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Richardson RFPD

The NXP Airfast GaN A3G26D055NT4 is a versatile 55 W peak GaN
discrete transistor housed in compact DFN 7 x 6.5 mm over-molded plastic package Read more...

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Qorvo

The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation.
Lead free and RoHS compliant. Read more...

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Qorvo

The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.
QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.
Lead free and RoHS compliant.

Key Features

  • Operating Frequency Range: 3.4 - 3.8 GHz
  • Operating Dr...
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Qorvo

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free... Read more...

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