Richardson RFPD

The Wolfspeed CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT). This single stage RF Transistor is internally matched to 50 Ohms on the input and output for ease of use. Read more...

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Richardson RFPD

CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities from DC to 15GHz. Read more...

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Richardson RFPD

The NXP Airfast GaN A3G26D055NT4 is a versatile 55 W peak GaN
discrete transistor housed in compact DFN 7 x 6.5 mm over-molded plastic package Read more...

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Richardson RFPD

Richardson RFPD is pleased to present this library of design tools from Wolfspeed, the leader in RF GaN. Intended to help you achieve first-pass design success, these tools include software and hardware-based tools in order to support multiple stages of development. Read more...

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Richardson RFPD

The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange. Read more...

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Wolfspeed

GaN on SiC & LDMOS power solutions for Telecom - The future arrives faster with Wolfspeed GaN on SiC technology

Tomorrow’s 5G demands today’s Wolfspeed GaN on SiC semiconductors.

Telecommunications infrastructure is continually evolving to meet the insatiable demand for a better mobile experience, driving countless cellular base station designs. This demand... Read more...

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Qorvo

The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation.
Lead free and RoHS compliant. Read more...

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Wolfspeed

Aerospace & Defense - Elevate the performance of your RF systems with the industry’s most reliable, compact, and efficient RF power devices.

RF flies farther with Wolfspeed GaN on SiC.

RF technology advancements are moving wireless systems forward. It’s the backbone of telecommunications and radar for navigation and safety systems across commercial an... Read more...

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Qorvo

The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.
QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.
Lead free and RoHS compliant.

Key Features

  • Operating Frequency Range: 3.4 - 3.8 GHz
  • Operating Dr...
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