Product Announcements:
RF Transistors

DHS066-225 multi-channel slip ring is developed for rotary test equipment, high-precision turntables and comprehensive test benches. Equipped with 225 independent isolated channels, it supports mixed transmission of AC/DC high & low voltage and various currents. Built-in multi-layer shielded wires are compatible with aviation bus, serial port, temperature measurement and heating load... Read more...

Featuring ultra‑wide bandwidth, low jitter, low insertion loss, stable VSWR and high isolation, they support RF, data, power, gas‑liquid mixed transmission. Customizable for channels, frequency, speed and materials, widely used in radar, satellite antenna, vehicle and military‑civil rotating test platforms. Read more...

The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited fo... Read more...

QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already... Read more...

QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already... Read more...

QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already s... Read more...

Semiconductor/IC Testing and Characterization Services from Richardson RFPD Read more...