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Supplier: VAST STOCK CO., LIMITED
Description: Differential Amplifiers 2x 10GHz GBW, 1.1nV/vHz Diff Amp/ADC D
- Device Type: Differential Amplifiers, Other
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Supplier: ValueTronics International, Inc.
Description: DC Input Resistance 100 k O Differential 50 k O Single-ended AC Loading: Zmin >200 O Out to 10 GHz Versatility: Make Differential or Single-ended (Ground Referenced) Measurements Solder
- Bandwidth: 8000 MHz
- Probe Type: Differential
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Supplier: ValueTronics International, Inc.
Description: , Fireware 1394b, Rambus, XAUI Low Probe Loading: DC Input Resistance 100 kO Differential 50 kO Single Ended AC Loading: Zmin >200 O out to 10 GHz Versatility:
- Bandwidth: 12500 MHz
- Probe Type: Differential
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Supplier: ValueTronics International, Inc.
Description: >8 GHz Bandwidth (typical) <55 ps 10% to 90% Rise Time (guaranteed) <35 ps 20% to 80% Rise Time (typical) Dual SMA Inputs to Internal 50 ? Termination Network High Bandwidth Differential Amplifier with Excellent CMRR Internal
- Bandwidth: 8000 MHz
- Probe Type: Differential
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Supplier: Utmel Electronic Limited
Description: LINEAR TECHNOLOGY LTC6409IUDB#TRMPBF DIFF AMP, 10GHZ, 3300V/US, QFN-10
- Device Type: Differential Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: High Speed Operational Amplifiers 10GHz GBW 1.1nV/rtHz Differential Amp10GHz GBW 1.1nV/rtHz Differential Amp
- Device Type: Operational Amplifiers, Other
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Supplier: Win Source Electronics
Description: : Differential -3db Bandwidth: 2 GHz Amplifier Type: Limiting Current - Supply: 38mA Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 10-MSOP-EP Temperature Range - Operating: -40°C ~ 85°C ECCN: EAR99 Fake Threat
- Device Type: Buffer, Instrumentation Amplifiers, Operational Amplifiers
- Package Type: Other
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Supplier: Win Source Electronics
Description: -3db Bandwidth: 1.4GHz Amplifier Type: Differential Current - Input Bias: 10µA Voltage - Input Offset: 500µV Family Name: ADA4939-2 Categories: Integrated Circuits (ICs) Operating Supply Current: 36.5mA Manufacturer Package: 24-LFCSP-WQ (4x4) Output Current
- Device Type: Buffer, Instrumentation Amplifiers, Operational Amplifiers
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Supplier: Win Source Electronics
Description: Bandwidth: 2GHz Amplifier Type: Buffer Current - Input Bias: 5µA Voltage - Input Offset: 500µV Family Name: LTC6416 Categories: Integrated Circuits (ICs) Operating Supply Current: 42mA Manufacturer Homepage: www.linear.com Manufacturer Package: 10-DFN (3x2
- Device Type: Buffer, Instrumentation Amplifiers, Operational Amplifiers
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Supplier: Win Source Electronics
Description: Bandwidth: 2GHz Amplifier Type: Buffer Current - Input Bias: 5µA Voltage - Input Offset: 500µV Family Name: LTC6416 Categories: Integrated Circuits (ICs) Operating Supply Current: 42mA Manufacturer Package: 10-DFN (3x2) Output Current per Channel: 20mA SR
- Device Type: Buffer, Instrumentation Amplifiers, Operational Amplifiers
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Supplier: VAST STOCK CO., LIMITED
Description: Amplifier IC Development Tools LTC6409 - 10GHz, 1nV/rt(Hz) Differential
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Supplier: ValueTronics International, Inc.
Description: The 1168A is a Probe Amplifier from Agilent. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Bandwidth: 10 GHz Dynamic Range: 3.3 V peak to
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Supplier: Microchip Technology, Inc.
Description: The SY10/100EL32V are integrated ÷2 dividers. The differential clock inputs and the VBB allow a differential, single-ended or AC-coupled interface to the device. If used, the VBB output should be bypassed to ground with a 0.01µF capacitor. Also note that the VBB is designed to
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Supplier: Microchip Technology, Inc.
Description: The SY10EP89V is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digitial video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The driver
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: The SY10/100EP11U is a precision, high-speed 1:2 differential fanout buffer. Having within-device skews and output transition times significantly improved over the EL11V, the EP11U is ideally suited for those applications which require the ultimate in AC performance.The
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: The SY10EP16V is a high-speed differential receiver. The device is functionally equivalent to the EL16V devices, with higher performance capabilities. With output transition times significantly faster than the EL16V, the SY10EP16V is ideally suited for interfacing with high
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Supplier: Renesas Electronics Corporation
Description: The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over
- Package Type: Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: 10 dB with 30 dBc of image rejection. The ADMV7420 uses a low noise amplifier followed by an image rejection mixer that is driven by a 6× local oscillator (LO) multiplier. Differential I and Q mixer outputs are provided for direct conversion applications. Alternatively, the
- Conversion Gain: 10 dB
- Form Factor: Other
- Input Frequency Range: 81000 to 86000 MHz
- Noise Figure: 5 dB
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Supplier: Richardson RFPD
Description: The ADAR2001 is a transmitter IC optimized for millimeter wave body scanning applications. Accepting a single-ended continuous wave (CW) input signal between 2.5 GHz and 10 GHz, the ADAR2001 provides gain, 4x frequency multiplication, harmonic filtering, 1:4 signal splitting,
- Device Type / Applications: Transceiver
- IC Package Type: LGA, Other
- Supply Voltage: 2.5 V, Other
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Supplier: Richardson RFPD
Description: single-ended output buffer amplifier, matched to a 50 Ohm load up to 10 GHz. The DAC core is based on a quad-switch architecture, which is configurable to increase the effective DAC core update rate of up to 12.8 GSPS from a 6.4 GHz DAC sampling clock, with an analog
- IC Package Type: Other
- Resolution: 16 bits
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®ZVT8/R&S®ZVT20 from Rohde & Schwarz is the first true eight-port/six-port vector network analyzer with a frequency range from 300 kHz to 8 GHz/10 MHz to 20 GHz. The R&S®ZVT8 contains up to four internal generators and up to 16 receivers. The R&S®ZVT20
- Display Options: None
- Frequency Range: 300 to 2.00E7 kHz
- Instrument Type: PC-Based Instrument / Module
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Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
HSA-X-2-40 has: 670 pV (pico volt - 10^-12) noise levels 40dB VA gain at the 2GHz high frequency end. The (read more)
Browse Instrumentation Amplifiers Datasheets for Electro Optical Components, Inc. -
The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
coupling within a broadband frequency range of 10.0 to 46.0 GHz in a single, compact and lightweight package. In addition, Model 510046010 offers superior performance (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
ULTRA4100400K, delivers exceptional versatility from 10.0 to 40.0 GHz (X- thru KA-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.9 dB; Phase Imbalance is ±8 degrees; Isolation is >15 dB; Maximum VSWR: 1.65; and Insertion (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
measurement, antenna beamforming, and electromagnetic compatibility (EMC) testing environments. This ultra-wideband coupler can also be manufactured to meet rigid military specifications. KRYTAR’s new hybrid coupler, Model ULTRA4100400, delivers exceptional versatility from 10.0 to 40.0 GHz (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
Qorvo's QPA0022D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0022D provides 24 dB small signal gain and 25 dBm P1dB with saturated power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
QPF0219 is a multi-chip Front-End Module (FEM) designed for 2-18 GHz Wide-Band radar applications. The FEM integrates a T/R switch, a limiter, a low-noise amplifier and a power amplifier. Transmit power is 10 W saturated with 20% PAE and large signal gain is 13 dB, small signl is 19d (read more)
Browse RF Transceivers Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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Low-cost, signed online chromatic dispersion detection scheme applied to a 2 x 10 Gb/s RZ-DQPSK optical transmission system
The outputs of the two optical front ends were connected to a 10 GHz differential amplifier and then connected to a decision circuit (D-FF), clocked by the recovered clock and set to the optimal threshold voltage.
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Broadband programmable equalizer and limiting amplifier for an XFI interface in 45nm CMOS
This design, requires an 8dB gain, 10GHz BW differential amplifier .
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End-to-end asynchronous optical packet transmission, scheduling, and buffering
The recovered clock is amplified and injected into the positive input of a 10 GHz differential limiting amplifier .
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A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET
The −3-dB bandwidth of the differential amplifier was 10 GHz with a differential gain of 28 dB, which shows very high performance for high-bandwidth analog/mixed signal applications.
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A technique to measure afterpulse probabilities in InGaAs SPADs at nanosecond time scales with sub-picoCoulomb avalanche charge
The two signals at nodes A and B are subtracted with an active component, a differential amplifier with 10 GHz bandwidth and a common mode rejection ratio (CMRR) greater than 20 dB.
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Avalanche discrimination and high-speed counting in periodically gated single-photon avalanche diodes
The differential amplifier has a 10 GHz bandwidth, common mode rejection ratio better than 20 dB, and gain greater than 25 dB.
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National Semiconductor Introduces Industry's Highest-Performance, 10-Bit, 1 GSPS Signal Path Solution
Santa Clara, CA - National Semiconductor Corp. recently introduced a 2.5 GHz fully differential amplifier and a 10 -bit, 2 Giga-sample per second (GSPS) single/1 GSPS dual analog-to-digital converter (ADC) that deliver unequaled dynamic system-level performance and low…
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National Semiconductor Introduces Differential Amp and ADC Combo
National Semiconductor has introduced a 2.5 GHz fully differential amplifier and a 10 -bit, 2 Giga-sample per second (GSPS) single/1 GSPS dual analog-to-digital converter (ADC) that deliver unequaled dynamic system-level performance and low power for wideband applications.
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A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends
9 GHz differential SiGe transimpedance amplifier for 10 Gbit/s fiber optical front- .
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Table of contents
II-246 Bülent Cakmak, T. Karacali, M. Biber and Caglar Duman 9 GHz Differential SiGe Transimpedance Amplifier for 10 Gbit/s Fiber Optical Front- Ends ....................................................................................................................