Alpha Silicon Carbide

Description: SILICON CARBIDE, ALPHA, SINTERED

Description: MORSIL nitride bonded is refractory grade alpha silicon carbide. The alpha silicon carbide crystals impart high thermal conductivity and refractoriness, low thermal expansion and outstanding abrasion/erosion resistance. To manufacture MORSIL nitride bonded,

• Features: Specialty / Other

Description: Hexoloy® silicon carbide is one of the hardest high-performance materials available. Hexoloy sintered alpha silicon carbide will outperform other commercially available ceramics or metal alloys, including superalloys. Hexoloy silicon carbide is ideal

• Applications: Armor / Ballistic Protection, Refractory / High Temperature Materials, Wear Parts / Tooling
• Features: Carbide Materials, Other
• Shape / Form: Fabricated / Custom Shape
• Carbide Type: Silicon Carbide

Description: silicon carbides and tungsten carbides, Hexaloy® SP SiC contains no free silicon phase or metallic binder subject to corrosive attack. This material is a fine grain, single phase SiC product produced via pressureless sintering of submicron silicon

• Features: Carbide Materials, Other
• Shape / Form: Fabricated / Custom Shape
• Carbide Type: Silicon Carbide
• Applications: Wear Parts / Tooling

Description: materials include silica, alumina-silica, zirconia, titania, silica, and silicon carbide. Saint-Gobain NorPro also offers a range of attrition-resistant, porous, low-surface area fluidizable aluminas as the basis of active and stable fluid bed catalysts. Particle sizes from 50 to 120

• Diameter: 0.1181103 to 19.68505 inch
• Density: 0.5599282373294034 to 1.3598257192285512 g/cc
• Width / O.D.: 0.1181103 to 19.68505 inch
• Features: Carbide Materials, Granular Fill / Bed Media, Other, Silicon Nitride, Specialty / Other, Specialty Ceramic

Description: materials include silica, alumina-silica, zirconia, titania, silica, and silicon carbide. Saint-Gobain NorPro also offers a range of attrition-resistant, porous, low-surface area fluidizable aluminas as the basis of active and stable fluid bed catalysts. Particle sizes from 50 to 120

• Diameter: 0.1181103 to 19.68505 inch
• Density: 0.5599282373294034 to 1.3598257192285512 g/cc
• Width / O.D.: 0.1181103 to 19.68505 inch
• Applications: Chemical / Materials Processing

Description: Hexoloy® silicon carbide is one of the hardest high-performance materials available. Hexoloy sintered alpha silicon carbide will outperform other commercially available ceramics or metal alloys, including superalloys. Hexoloy silicon carbide is ideal

• Applications: Armor / Ballistic Protection
• Features: Carbide Materials
• Shape / Form: Fabricated / Custom Shape, Spout / Nozzle (Launder Pouring / Atomization), Tile
• Carbide Type: Silicon Carbide

Description: Technical Data Hexoloy® SA SiC is a pressureless, sintered form of alpha silicon carbide, with a density greater than 98 percent theoretical. It has a very fine grain structure (4 - 10 microns) for excellent wear resistance and contains no free silicon, which makes it

• Density: 3.1 g/cc
• Max Use / Curie Temperature: 1,900 C
• Thermal Conductivity: 125.6 W/m-K
• Coeff. of Thermal Expansion (CTE): 4.02 µm/m-C

Description: Platinum thermocouple assemblies with support tubes for limit and control. Used in a vacuum-environment, heat-treat furnace with inert-gas purge. Tungsten-rhenium Type C assemblies with sintered alpha silicon carbide sheath tubewell for use in semiconductor sintering

• Diameter or Width Range: 0.002 inch
• Probe Features: Available as an Assembly
• Sensor Termination Type: Plug or Quick Connect
• Features: Thermocouple

Description: 1200V SILICON CARBIDE MOSFET Product overview: AOM065V120X2Q from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers

• P_D: 187,500 milliwatts
• T_J: -55 to 175 C
• Features: MOSFET, Other

Description: SILICON CARBIDE MOSFET, ENHANCEM Product overview: AOK065V120X2 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers

• P_D: 187,500 milliwatts
• T_J: -55 to 175 C
• Features: MOSFET, Other

Description: Active Package / Case: TO-247-4 Supplier Device Package: TO-247-4L Base Product Number: AOM033 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On,

• P_D: 300,000 milliwatts
• T_J: -55 to 175 C
• Features: MOSFET
• Polarity: N-Channel

Description: side cut-out or with other support brackets. The standard temperature version (to 1200 °C) is supplied with high purity alumina rods. The high temperature option is furnished with alpha grade silicon carbide rods. Rods are made to order to the length required for your furnace.

• Test Temperature: 2,912 F
• Test Standard: ASTM, ISO
• Application: Compressive, Tensile
• Test Fixture Type: Extensometer

Description: grade silicon carbide rods. Rods are made to order to the length required for your furnace. Mounting brackets may be integrated with the furnace cut-out. Epsilon can also provide optional load frame mounting brackets to fit your test frame. Contact edges on the test sample should be

• Test Temperature: 2,192 F
• Test Standard: ASTM
• Test Fixture Type: Extensometer
• Application: Tensile