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Supplier: Integrated Device Technology
Description: The 72841 is a 4K x 9 dual synchronous (clocked) FIFO . The device is functionally equivalent to two 72241 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each of the two FIFOs has a 9-bit input data port and a 9-bit output
- Data Rate: 100 MHz
- Density: 36 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72851 is a 8K x 9 dual synchronous (clocked) FIFO . The device is functionally equivalent to two 72251 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each of the two FIFOs has a 9-bit input data port and a 9-bit output
- Data Rate: 40 MHz
- Density: 72 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72821 is a 1K x 9 dual synchronous (clocked) FIFO . The device is functionally equivalent to two 72221 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each of the two FIFOs has a 9-bit input data port and a 9-bit output
- Data Rate: 100 MHz
- Density: 9 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72801 is a 256 x 9 dual synchronous (clocked) FIFO . The device is functionally equivalent to two 72201 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each of the two FIFOs has a 9-bit input data port and a 9-bit output
- Data Rate: 66 MHz
- Density: 2 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Microchip Technology, Inc.
Description: The SY89222L is a dual TTL-to-differential LVPECL translator with a +3.3V power supply. Because LVPECL (Positive ECL) levels are used, only +3.3V and ground are required. The SY89222L is functionally equivalent to the SY100ELT22L but in an ultra-small 8-lead MLF™ package that features a 70
- Input Voltage: 3.3 volts
- Logic Family: Transistor-Transistor Logic (TTL), PECL
- Operating Current: 25 mA
- Package: Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available
- Transistor Type: MOSFET
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Supplier: AMP Display Inc.
Description: x 2.8"(diagonal), 240 x RGB x 320 dots, 262k colors, Transmissive, TFT LCD module. x Viewing Direction: 6'clock. x Driving IC: ILI9341 or equivalent TFT controller/driver. x 16-bits data bus (I80 system interface). x Logic voltage: 2.8V (typ.). x Touch panel.
- Display Type: Graphic Display
- Technology: AMLCD, Thin Film Transistor (TFT)
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Supplier: AMP Display Inc.
Description: • 2.4"(diagonal), 320 x RGB x 240dots, 262k colors, Transmissive, TFT LCD module. • Viewing Direction: 6'clock. • Driving IC: ILI9341 or equivalent TFT controller/driver. • 16-bits data bus (I80 system interface). • Logic voltage: 2.8V (typ.). • Without Touch panel.
- Display Type: Graphic Display
- Technology: AMLCD, Thin Film Transistor (TFT)
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Supplier: ASTM International
Description: 1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a spectrum
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Supplier: ASTM International
Description: 1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a spectrum
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Supplier: ASTM International
Description: 1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a spectrum
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Supplier: ASTM International
Description: 1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a spectrum
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Supplier: ValueTronics International, Inc.
Description: shunt loss of the test component down to Q values as low as 1. If the loss of the test component is predominantly in series, as is the case with most junction capacitance measurements, the capacitance indicated is also essentially the same as the equivalent series capacitance value, provided
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Volume and Velocity are Driving Advances in Data Center Network Technology
Just about everyone, and certainly every engineer, has heard of Moore's Law, in which Gordon Moore predicted that technological advances would lead to a doubling of the number of transistors on a chip approximately every two years. Fewer people have heard of its networking equivalent, Metcalfe's
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
. The company also said it was making other cuts in operations worldwide and outsourcing more of its production to subcontractors. Transistors from GHz Technology improve data traffic in airways SANTA CLARA, Calif. -- GHz Technology Inc. here rolled out a new series of avionics transistors for onboard
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A Simulation Study of the Punch-Through-Assisted Hot Hole Injection Mechanism for Nonvolatile Memory Cells
This paper proceeds as follows: The simulation model is pre- sented and validated against experimental data for equivalent transistors in Section II.
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Operation of single transistor type ferroelectric random access memory
The lines and the filled symbols represent the experimental data of the write state and the simulated data of the equivalent transistor , respectively.
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Extraction of the parameters of equivalent circuits of microwave transistors using tree annealing
TREEANNEALINGTHEORY We have developed a reformulation of SA that can robustly extract a 14-parameter transistor equivalent cir- cuit from data .
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AlGaAs/GaAs anti GaInP/GaAs HBT for high temperature microwave operation
For the interpretation of the data a T- equivalent transistor circuit has been used.
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Implementation of temperature dependence in small-signal models of microwave transistors including noise
By using experimental data , the elements of transistor equivalent circuit were extracted.
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Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor
The gm data of the matching cells and equivalent transistors show the technology indepen- dent distinctive trends.
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Winner-Take-All Networks with Lateral Excitation
Having not instrumented transistor M1 of Fig. 1(a) (and all other equivalent transistors in the array), the data shown in Fig. 3 was obtained through circuit sim- ulations, by means of which it was possible to measure the current flowing through …
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http://waset.org/publications/8413/delay-and-energy-consumption-analysis-of-conventional-sram
is equivalent resistance of data -line driver transistors .
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Performance-driven SRAM macro design with parameterized cell considering layout-dependent effects
… cell, Req access cell is equivalent resistance of access transistor of cell, Req column access is equivalent resistance of transmission gate, this transmission gate connect bit-line to data-line and Req driver DL is equivalent resistance of data -line driver transistors .
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Complete Wireless Design > Amplifier Design
In the transistor ’s data sheet look for its Series Equivalent Impedance, either found on a Smith chart, graph, or table, to obtain the transistor’s series input impedance Z IN and its desired load impedance Z OUT (Z OL) at the desired …