-
Supplier: Broadcom Inc.
Description: specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
-
Supplier: Broadcom Inc.
Description: cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
-
Supplier: Broadcom Inc.
Description: uncooled applications with data rates up to 10.7 Gb/s. The laser is mounted into a TO header and hermetically sealed with a specific lens cap. The laser design is a buried heterostructure with multi-quantum well (MQW) active layers and DFB grating layer. All laser chips
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
- Wavelength Range: 1470 to 1610 nm
-
-
Supplier: Broadcom Inc.
Description: ). The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
- Wavelength Range: 1490 nm
-
Supplier: Electro Optical Components, Inc.
Description: IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems
- Active Area Diameter or Length: 0.2000 to 2 mm
- Dark Current: 500 to 500000 nA
- Operating Temperature: -40 to 50 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Electro Optical Components, Inc.
Description: IBSG Co. Ltd. was founded by several leading researchers from the Ioffe Physico-Technical Institute in 1992 and specialized in developing and manufacturing of optoelectronic devices for mid-infrared spectral range. They provide the complete technological cycle including heterostructure growth
Find Suppliers by Category Top
Conduct Research Top
-
EETimes.com | Electronics Industry News for EEs & Engineering Managers
systems, Intel Corp.'s new fabless ASIC operation today announced a complete set of chip building blocks and intellectual-property (IP) cores for use in 10-gigabit-per-second applications. Japan's Furukawa, Mitsui Chemical team up in 980-nm laser chips CHIBA, Japan -- Furukawa Electric Co. Ltd
More Information Top
Indicates content that may require registration and/or purchase.
-
Long-Wavelength Infrared Semiconductor Lasers
… 3 mm Range 3.3.1 Historical Development 3.3.2 State of the Art 3.4 Antimonide Lasers Emitting in the l ≥ 3 mm Range 3.4.1 Historical Development 3.4.2 Double- Heterostructure Lasers 3.4.3 Type …
-
Physics and Technology of Heterojunction Devices
7.4 Double heterostructure lasers 247 .
-
Back cover
Hi ashi, Takeshi thresholdcurrent in (GaAI) As double- heterostructure lasers with .
-
Integrated Optics
13.6 A double- heterostructure laser diode is used as a Fabry-Perot-type optical amplifier.
-
Basics of Laser Physics
Double- Heterostructure Laser ......................................
-
Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials Complete Document
Aksenov, T.N. Nalet, Nguen Tkhan’ Fyong, V.D. Rumyantsev and V.P. Khvostikov, Milliampere-range (Ithr = 2.1 mA, 300 K) stripe-geometry quantum-well AlGaAs heterostructure lasers fabricated by low-temperature liquid-phase epitaxy, Sov. Tech. Phys. Lett., 14(4 …
-
Mid-infrared Semiconductor Optoelectronics
228 4.2 Advanced Tunnel-injection Heterostructure Laser ..................................
-
Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures
H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978; Mir, Moscow, 1981).
-
Electro-Optics Handbook, Second Edition > SEMICONDUCTOR LASERS
Structure and band diagrams at zero bias and forward bias for (a) the homostructure laser and (b) the heterostructure laser .
-
Single Mode Lasers For Optical Communications
Buus, J., "Buried Heterostructure Lasers in the GaInAsP System: .