TABLE OF CONTENTS Primary recrystallization, secondary recrystallization, grain growth and A/ ? (crystalline/amorphous) solid phase epitaxy are some of the phenomena that involve the motion of an interface between solid phases that have the same composition. We shall consider each of these phenomena from a common viewpoint. However, the mechanism of each phenomenon differs, and needs to be considered separately.
We consider two classes of rate processes in this chapter. One involves the migration of an interface between crystals of the same phase which, except for the excess energy associated with defects, are stable. The other involves migration of an interface between a crystal of a material and the amorphous phase of the same composition. Both, in phenomenological terms, can be described by the same relation in which the interface velocity is proportional to the product of the driving force and a mobility. However, as will be noted later in the section on mechanisms, there is little to be gained by considering the second process, known as A/ ? solid phase epitaxy, from this viewpoint, since the driving force does not appear to be a parameter that can be varied and its effect tested, at least at this writing.
The first class comprises the processes that go under the names of recrystallization and grain growth. It is worthwhile to discuss recrystallization and grain growth kinetics from the separate viewpoints of the driving force and mobility. Because of the generally low values of...
