A 2D hydrodynamic model based on modified Langevin forces for terminal current noise in the RF range is presented for Si and SiGe devices, where all transport and noise parameters are generated by full-band Monte Carlo simulations under bulk conditions and stored in lookup tables. Since these tables have to be built only once, the accuracy of the noise model is improved without increasing the CPU time compared to models based on analytical expressions for the parameters. The accuracy of the noise model is assessed by comparison with the Monte Carlo device model and good agreement of both models is found for diffusion and generation noise. The terminal current noise of a realistic SiGe HBT is investigated and it is found that hole diffusion noise has a strong impact on the collector current noise. The limitations of the thermodynamic model, a compact model for noise, are explored by comparison with the hydrodynamic model.

1 Introduction

In the next decade inexpensive Si based CMOS and BICMOS technologies enhanced by strained Si and SiGe layers will dominate the mass markets for wireless and fiberoptic communication ICs up to frequencies of 50GHz and beyond. ^[1], ^[2], ^[3] Accurate modeling...