Vladimir Dmitriev and Alexander Usikov ^[*]
Technologies and Devices International, Inc.,
12214 Plum Orchard Dr., Silver Spring, MD 20904, USA

In this chapter we describe recent experimental results on hydride vapor phase epitaxy (HVPE) of group III nitride materials including epitaxial layers and multi-layer device structures. Properties of GaN, InN, AlN, and AlGaN layers grown by HVPE are presented. For GaN layers, n- type and p-type doping during HVPE growth is reported. Thick crack free AlN layers grown by stress control HVPE are described. New directions in HVPE technology including large area growth, multi-wafer growth, sub-micron multi-layer growth, and fabrication of nano-size structures including GaN and InN nanowires are briefly discussed. Properties of HVPE grown AlGaN/GaN hetero structures with two-dimensional electron and two dimensional hole gases are presented. Applications of HVPE grown group III nitride materials including substrate applications (template substrates, free standing substrates, and bulk substrates) and device structures for both optoelectronic application (blue and ultraviolet light emitting diodes grown by HVPE) and electronic applications (high electron mobility transistors grown by HVPE) are discussed as well.