Crystal Growth Technology

Chapter 7: Silicon Carbide Crystals - Part II: Process Physics and Modeling

Q.-S. Chen [1] V. Prasad [3] H. Zhang [1] and M. Dudley [2]
Center for Crystal Growth Research,

Nomenclature

a

activity

A

area (m 2)

A

magnetic vector potential (Wb/m)

A SiC

growth area (m 2)

B

magnetic flux density (T)

c p

isobaric specific heat, (J/kg/K)

d p

mean diameter of the charge particles (m)

D

diffusion coefficient (m 2/s)

D c

diameter of crucible (m)

f

frequency (Hz)

F

radiation view factor

g

gravitational acceleration (m/s 2)

Gr

Grashof number, ? 2 g ?R 3 ? T/ ? 2

G SiC

growth rate (m/s), dissolving rate of particles (m/s)

isobaric-isothermal Gibbs-function

h

heat transfer coefficient (W/m 2/K)

heat of formation

H

latent heat (J/kg)

I

current (A)

J

current density (A/m 2)

k

thermal conductivity (W/m/K)

K

equilibrium constant of a chemical reaction

L

gap between the charge and seed (m)

M

molecular weight (kg /mol)

p

pressure (Pa)

P

partial pressure (Pa)

Pe

mass P let number ( UL/D)

Pr

Prandtl number ( ? c p /k)

q

heat flux (W/m 2)

heat generated by eddy currents (W/m 3)

radiative heat flux (W/m 2)

Q

heat flux (W)

r

radial coordinate (m)

R

universal gas constant, 8.314 (J/mol/K); heat resistance (K/W)

R s

radius of susceptor (m)

Ra

Rayleigh number ( Gr Pr)

t

time (s)

T

temperature (K)

? T

temperature difference between the charge and seed (K)

u

displacement component

UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Category: ISO Containers
Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.