Crystal Growth Technology

Q.-S. Chen [1] V. Prasad [3] H. Zhang [1] and M. Dudley [2]
Center for Crystal Growth Research,
| a | activity |
| A | area (m 2) |
| A | magnetic vector potential (Wb/m) |
| A SiC | growth area (m 2) |
| B | magnetic flux density (T) |
| c p | isobaric specific heat, (J/kg/K) |
| d p | mean diameter of the charge particles (m) |
| D | diffusion coefficient (m 2/s) |
| D c | diameter of crucible (m) |
| f | frequency (Hz) |
| F | radiation view factor |
| g | gravitational acceleration (m/s 2) |
| Gr | Grashof number, ? 2 g ?R 3 ? T/ ? 2 |
| G SiC | growth rate (m/s), dissolving rate of particles (m/s) |
|
| isobaric-isothermal Gibbs-function |
| h | heat transfer coefficient (W/m 2/K) |
|
| heat of formation |
| H | latent heat (J/kg) |
| I | current (A) |
| J | current density (A/m 2) |
| k | thermal conductivity (W/m/K) |
| K | equilibrium constant of a chemical reaction |
| L | gap between the charge and seed (m) |
| M | molecular weight (kg /mol) |
| p | pressure (Pa) |
| P | partial pressure (Pa) |
| Pe | mass P let number ( UL/D) |
| Pr | Prandtl number ( ? c p /k) |
| q | heat flux (W/m 2) |
|
| heat generated by eddy currents (W/m 3) |
|
| radiative heat flux (W/m 2) |
| Q | heat flux (W) |
| r | radial coordinate (m) |
| R | universal gas constant, 8.314 (J/mol/K); heat resistance (K/W) |
| R s | radius of susceptor (m) |
| Ra | Rayleigh number ( Gr Pr) |
| t | time (s) |
| T | temperature (K) |
| ? T | temperature difference between the charge and seed (K) |
| u | displacement component |