Qorvo's QPA0015 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0015 targets the 13.75-14.5 GHz Satcom band while providing 3-Watts of linear power with third-order intermodulation distortion products of 25 dBc. Furthermore, the QPA0015 can deliver output powers up to 8-Watts with 35 dB of small-signal gain... (read more)

The Qorvo QPF4209 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 5V supply voltage that minimizes power consumption to allow for systems that use digital pre-distortion to achieve the highest linear output power... (read more)

Qorvo’s QPC0542 is an ultra-wide band SOI Single-Pole, Double–Throw (SPDT) reflective switch. Operating from 0.02 to 50GHz, the QPC0542 typically supports up to 1W input power handling at control voltages of 0/+3 V. This switch maintains low insertion loss of 2 dB or less and greater than 40 dB isolation at 40 GHz, making it ideal for high isolation switching applications acr... (read more)

The QPM2101 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4.0 GHz range. The device consists of a T/R switch, a transmit path which is a low loss pass through, and a receive path consisting of a low-noise amplifier, a digital attenuator and a driver amplifier. The receive path offers 30 dB of small signal gain and 1.0 dB noise figure. It includes... (read more)

The QPB9350 is a highly integrated Rx front-end module targeted for high performance macro base station receivers. The RX VGA SiP (receive variable gain amplifier system in package) integrates high performance first stage low noise amplifiers (LNA), digital step attenuators (DSA), second stage LNA in a dual channel configuration. Power down capability for the amplifiers can be controlled... (read more)

Qorvo's QPA0708T is a power amplifier fabricated on Qorvo's 0.25um GaN on SiC process (QGaN25), mounted to a high thermal conductivity tab. Operating between 7.9 and 8.4 GHz, it achieves 36 dB small signal gain, 32 W linear power with −25 dBc intermodulation distortion products, and saturated output power of 72 W with a power-added efficiency of 49.3 %.
QPA0708T is ideally sui... (read more)

Qorvo's QPA0524 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0524 targets the 24.25-26.5 GHz for 5G and Satcom band. It provides 400 mW linear power with ACPR of -30 dBc at 802.11ac 160MHz MSC9. Furthermore,

The QPA0524 can deliver output powers up to 5 W with 35 dB of small-signal gain and 23% pow... (read more)

Qorvo's PAC52710 expands Qorvo's broad portfolio of full-featured Power Application Controller® (PAC) products - highly optimized System On Chip (SOC) for controlling and powering next generation smart energy appliances, devices, and equipment – by adding new features such as VDS Sensing, Cycle By Cycle (CBC), Enhanced Sample And Hold (S&H), Windowed Watchdog Timer, and mor... (read more)

The Qorvo® QPF4750 is an extreme wideband medium power front end module (FEM) designed for Wi-Fi 6E (802.11ax) systems. This FEM implements extreme wideband amplfier technology to create an easier to use and extremely compact solution for Wi-Fi applications where operating on any channel within U-NII1-8’s 2GHz of bandwidth is deisred. The small form factor and integrated matchi... (read more)

The UF4C120070B7S is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun... (read more)

The UF4C120053B7S is a 1200V, 53 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superju... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Ava... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L pa... (read more)

The Qorvo® QPF4257 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput. Integrate... (read more)

Qorvo's QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz Satcom band while providing 12.5-Watts of linear power with third-order intermodulation distortion products of 25 dBc. Furthermore, the QPA0017 can deliver output powers up to 25-Watts with 30 dB of small-signal g... (read more)

The DW3300Q is a fully integrated single chip Ultra-Wideband (UWB) low-power low-cost transceiver IC compliant to IEEE Std 802.15.4™‐2020 and IEEE Std 802.15.4z™‐2020 (BPRF mode) for automotive applications. It can be used in SS-TWR, DS-TWR, TDoA and PDoA systems to locate assets to an accuracy of 10 cm. (read more)

The Qorvo QPF4659 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading-edge throughput. This is done a... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo... (read more)

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo... (read more)

Qorvo's QPC1030D is a single-pole, single-throw (SPST) reflective switch fabricated on Qorvo's QGaN15 0.15um GaN on SiC production process. Operating from 2 to 18 GHz, the QPC1030D typically provides up to 20W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.3 dB or less, and high isolation of 30 dB typical. The QPC1030D performance allow... (read more)

The Qorvo QPQ5601 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 5-8 band and high near-in rejection in the UNII 1-3 band.

The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power capabi... (read more)

The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun... (read more)

The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun... (read more)

The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun... (read more)

The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing to Si IGBTs, Si FETs,... (read more)

Qorvo's QPM0106 is a packaged, high power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0  - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency.
The QPM0106 is packaged in a 10-lead 15.24 x 15.24 mm bolt-down package, with a pure copper base... (read more)

The QPL7425 is a GaAs pHEMT single ended RF amplifier IC featuring 25 dB of flat gain and low noise. This IC is designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1218 MHz using a single supply operating from 3 V to 8 V. QPL7425 offers low noise and distortion plus high gain in a 3x3 QFN package for convenient layout and design in set top and infrastructure proje... (read more)

The QPB9850 is a highly integrated front-end module targeted for 5G TDD systems. The switch LNA module integrates an LNA with a high-power handling switch which
can be used as a failsafe path to termination when radio is in transmitting mode. LNAs can also be powered down during Tx mode via SW control pin on the module.
The QPB9850 provides 33 dB of gain at 3.6 GHz with 1.2 dB... (read more)

QPG6105 is a low power communications controller implementing Zigbee®, Thread, Matter, Bluetooth® Low Energy and Bluetooth Mesh protocols. It features the hardware based ConcurrentConnect™ technology enabling multiple protocols to operate simultaneously, delivering improved capacity and enhanced interoperability with the leading low power standards.

The QPG6105 SoC a... (read more)

Balun designed for applications that require small, low-cost and high reliable surface mount components. It offers low insertion loss combined with high RF power capability across a broad temperature range, compatible with 260°C lead-free soldering & RoHS compliant. (read more)

Transformer designed for applications that require small, low-cost and high reliable surface mount components, low insertion loss, high RF power capability across broad temperature range, compatible with 260°C lead-free soldering & RoHS compliant. (read more)

QPF5010 is a multi-die front-end module (FEM) designed for 8-12 GHz X-Band applications. The FEM integrates T/R switch, limiter, low-noise amplifier, and power amplifier. Transmit power is 10W saturated, receiver noise figure is 2.2dB.
Lead free and RoHS compliant. (read more)

Qorvo QPA4536 is a K-Band Power Amplifier with integrated power detector. The QPA4536 operates from 24.2 - 26.5 GHz and is designed using Qorvo’s power pHEMT production process. The QPA4536 typically provides 33 dBm of saturated output power, and 31.5 dBm output power at 1dB gain compression. The small signal gain is 18 dB, and Third Order Intercept is 43 dBm at 23 dBm SCL. To simp... (read more)

The Qorvo QM45500 is an integrated Mobile Wi-Fi front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a broad range of supply voltage (3.0 V < Vcc < 5.0 V). The multiple Wi-Fi TX modes enable optimization of output power, li... (read more)

The Qorvo® QM42500 is an integrated Mobile Wi-Fi front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a broad range of supply voltage (3.0V < Vcc < 5.0V). The multiple Wi-Fi and BT TX modes enable optimization of output... (read more)

Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 - 17.7 GHz band. It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20% power-added efficiency.
The QPA1315 is packaged in a 10-lead 15 x 15 mm bolt-down with a Cu base for supe... (read more)

10S-20S Intelligent BMS with Integrated MCU and Cell Balancing

The Qorvo® PAC25140 is a Smart Battery Monitoring System (BMS) that can monitor 10-series to 20-series Li-Ion, Li-Polymer and LiFePO4 battery packs. The PAC25140 integrates a FLASH-programmable MCU, Power Management, Current/Voltage/Temperature Sense and drive circuits for charge/discharge FETs and pr... (read more)

An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier with an operating range of 2–6 GHz. With its maximum performance in output power, gain, power added efficiency, and frequency range, this Spatium is the ideal building block for microwave subsystems with wide-ranging applications.

Qo... (read more)

The Qorvo® QPQ5600 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 5 band and high near-in rejection in the UNII 1-3 band.
The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power capab... (read more)

The Qorvo® QPF4559 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 5 V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput. This is... (read more)

The Qorvo® QPF4259 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading-edge throughput. Integrate... (read more)

The QPQ1041Q is a high-performance, high power Bulk Acoustic Wave (BAW) TX filter designed to meet the strict LTE/NR rejection requirements for use in B41 wide and n41. The QPQ1041Q is specifically designed to meet the high-performance expectations of insertion loss and rejection for LTE/NR transmit systems under all operating conditions in NAD (Network Attached Device) applications. (read more)

The QPQ1040Q is a high-performance, high power Bulk Acoustic Wave (BAW) TX filter designed to meet the strict LTE/NR rejection requirements for use in B40/n40. The QPQ1040Q is specifically designed to meet the high-performance expectations of insertion loss and rejection for LTE/NR transmit systems under all operating conditions in NAD (Network Attached Device) applications. (read more)

Qorvo’s QPA2225 is a wide band driver amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 28 – 38 GHz, the QPA2225 provides > 0.4 W of saturated output power with >22 dB of small-signal gain.
The QPA2225 dimensions are 4 x 3 x 2 mm. It can support a variety of operating conditions to best support system require... (read more)

The QPA8840 is a an ultra-linear, 22 dB Gain, GaAs amplifier, intended for mid or output stage amplification in CATV infrastructure applications. The QPA8840 operates off a 12 Volt, 425 mA supply. The device features a pushpull cascode design which provides flat gain along with ultra-low distortion from 50 MHz to 1.8 GHz. (read more)

The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band.
In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In X-Band, it provides 8W saturated power from 9 to 11GHz.
The QPA0004 is 100% DC and RF tested to ensure compliance to electrical specifications.
Lead free and RoHS compliant. (read more)

The ACT88760 PMIC is an integrated ActiveCiPS^TM power management integrated circuit. It powers a wide range of processors , including Solid-state drive Applications, Video and AI processors, FPGA's and computer vision. The ACT88760 is optimized for mid power applications like enterprise SSDs, video cameras, AR/VR devices, connected home devices, FPGAs, LPDDR5 applications etc.... (read more)

Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55... (read more)

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58... (read more)

Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The QPD2018D typically provides 22 dBm of output power at P1dB with gain of 14 dB a... (read more)

The QPC8014Q is a low loss, high isolation SP6T switch with performance optimized for LTE and diversity applications. The QPC8014Q is packaged in an ultra compact 1.1 mm x 1.9 mm x 0.44 mm, 13-pin, Module package which allows for the smallest solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports).

The QPC8018Q is a low l... (read more)

Qorvo's QPA2040D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 20 and 40 GHz, it achieves saturated output power of 2 W with power-added efficiency of 13%.
To simplify system integration, the QPA2040D is fully matched to 50 ohms with integrated DC blocking caps on both RF I/O ports. The RF input is DC blocked, and the RF out... (read more)

The QPB9362 is a highly integrated front-end module targeted for 5G TDD systems. The switch LNA module integrates an LNA with a high-power handling switch which can be used as a failsafe path to termination when radio is in transmitting mode. LNA Power down mode is available via T/R control pin on the module. The QPB9362 provides 34.5 dB of gain with 1.1 dB typical noise figure over the... (read more)

The QPC8013Q is a low loss, high isolation SP4T switch with performance optimized for LTE and diversity applications. The QPC8013Q is packaged in an ultra compact 1.1 mm x 1.9 mm x 0.44 mm, 13-pin, Module package which allows for the smallest solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports). (read more)

The Qorvo® QPF4632 is an integrated front end module (FEM) designed for Wi-Fi 6 & 6E (802.11ax) systems. The small form factor and integrated matching minimizes layout area in the application.

Performance is focused on optimizing the PA for a 3.3 V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput.... (read more)

The QPL1820 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 22 dB of flat gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (FTTH), Home Gateways, and Cab... (read more)

The QPA3245 is for use in 1.218 GHz CATV nodes and amplifiers. (read more)

The QPA3270 is an 18 W, High output Hybrid Power Doubler amplifier module. The part employs GaAs/GaN die and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance and optimal reliability. (read more)

The QPC8020Q is a low loss, high isolation SP4T switch with performance optimized for GSM, CDMA, WCDMA, & LTE applications requiring high linearity and high power handling. The QPC8020Q is packaged in a compact 1.1 mm x 1.1 mm, 9-pin module which allows for a small solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports). (read more)

Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency.
... (read more)

Qorvo's QPA4346D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4346D achieves 3 W linear power with 25 dBc third order intermodulation distortion products, and 16 dB small signal gain. It provides 6 W of saturated output power while achieving 20% power-added efficiency.
... (read more)

Qorvo's QPA4246D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4246D achieves 5 W linear power with 25 dBc third order intermodulation distortion products, and 16 dB small signal gain. It provides 10 W of saturated output power while achieving 17% power-added efficiency.
... (read more)

The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package. The QPL3050 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers 18 dB of gain and 20 dBm saturated output power from a single 5 V supply.
The QPL3050 is a 50 ohm matched design eliminating the... (read more)

The Qorvo® QPQ5500 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 1-3 band and high near-in rejection in the UNII5-8 band.

The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power ca... (read more)

Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB a... (read more)

Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 5... (read more)

The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package. The QPL3050 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers 18 dB of gain and 20 dBm saturated output power from a single 5 V supply.
The QPL3050 is a 50 ohm matched design eliminating the... (read more)

The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for... (read more)

Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency.

Packaged in a small 4 x 3 mm plastic overmold QFN, tight lattice spacing requirements for ph... (read more)

Qorvo’s QPA0001 is a packaged driver amplifier fabricated on Qorvo’s 0.15 um QGaN15 on SiC process. Operating from 8.5 to 10.5 GHz, the QPA0001 can deliver 2 W saturated output power, 50 % power-added efficiency and 27 dB of large signal gain.
QPA0001 incorporates active bias control to provide customers with bias point stability while reducing system complexity.
T... (read more)

The QPL7420 is a GaAs pHEMT single ended RF amplifier IC featuring 20 dB of flat gain and low noise. This IC is designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1800 MHz using a single supply operating from 3 V to 8 V. QPL7420 offers low noise and distortion plus high gain in a 3x3 QFN package for convenient layout and design in set top and infrastructure proje... (read more)

An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0618N is a solid state, spatial combining amplifier with an operating range of 6–18 GHz. With its maximum performance in output power, gain, power added efficiency, and frequency range, this Spatium is the ideal building block for microwave subsystems with wide-ranging applications.

Q... (read more)

The Qorvo QPC2110 is a packaged SOI 6-bit phase shifter. It operates over 8 – 11.5 GHz while providing 360° of phase coverage with a LSB of 5.625. The QPC2110 offers an exceptional RMS phase error of <3 degrees and amplitude error of <0.4 dB over most of the operational band. With other equally impressive small signal and linearity characteristics, the QPC2110 delivers su... (read more)