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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm
- Active Area Diameter or Length: 4 mm
- Array: Yes
- Dark Current: 7 to 75 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 4 mm
- Array: Yes
- Dark Current: 4 to 30 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.5000 to 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.8000 to 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: DigiKey
Description: Photodiode 420nm Array - 16 Element
- Array: Yes
- Dark Current: 500 nA
- Operating Temperature: -20 to 50 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Excelitas Technologies Corp.
Description: The C30985E is a 25-Element Silicon Avalanche Photodiode Linear Array consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as fast rise and fall times at all wavelengths.
- Active Area Diameter or Length: 0.3000 mm
- Active Area Height: 7.5 mm
- Array: Yes
- Dark Current: 100 to 300 nA
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Supplier: Excelitas Technologies Corp.
Description: The C30737GA-02-64-90 Silicon Avalanche Photodiode Array (Si APD array) provides high responsivity between 500 nm and 1000 nm and is available in a BGA type “top-looking” package. The C30737GA is ideally suited for high volume, cost-effective applications where a high
- Active Area Diameter or Length: 170 mm
- Active Area Height: 2500 mm
- Array: Yes
- Dark Current: 0.5000 nA
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter for array assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 20000 nA
- Operating Temperature: -50 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for array assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech
- Active Area Diameter or Length: 1 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Single-Photon Imaging
Hybrid Avalanche Photodiode Array Imaging ..........................
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Arrays of InP-based Avalanche Photodiodes for Photon Counting
In 2004, he joined Lincoln Laboratory, Massachusetts Institute of Technology (MIT), Lexington, where he developing optoelectronic semiconductor devices, and is primarily focusing on Geiger-mode avalanche photodiode arrays .
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OSA | Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector
… G. Kocher, D. G. Fouche, B. E. Player, M. E. OâBrien, B. F. Aull, J. J. Zayhowski, J. Mooney, B. C. Willard, and R. R. Carlson, âThree-dimensional imaging laser radar with a photon-counting avalanche photodiode array and microchip laser,â …
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OSA | Smart three-dimensional imaging ladar using two Geiger-mode avalanche photodiodes
… Fouche, R. M. Geinriches, D. G. Kocher, R. M. Marino, J. G. Moony, N. R. Newbury, M. E. O'Brien, B. E. Player, B. C. Willard, and J. J. Zayhowski, âThree-dimensional laser radar with geiger-mode avalanche photodiode arrays ,â Lincoln Lab.
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Geiger-mode APD camera system for single-photon 3D LADAR imaging
[1] M. A. Albota, B. F. Aull, D. G. Fouche, et al., “Three-dimensional imaging laser radars with Geiger-mode avalanche photodiode arrays ,” MIT Lincoln Laboratory Journal 13, 351 – 370 (2002).
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Development of high-transmittance back-illuminated silicon-on-sapphire substrates thinned below 25 micrometers and bonded to fused silica for high quantum effi...
To support the fabrication of large scale, high quantum efficiency and high resolution silicon avalanche photodiode arrays and other advanced solid-state optoelectronics, a novel, high transmittance, back- illuminated silicon-on-sapphire substrate has been developed incorporating a single crystal, epitaxially grown …
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Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging
[1] M. A. Albota, B. F. Aull, D. G. Fouche, et al., “Three-dimensional imaging laser radars with Geiger-mode avalanche photodiode arrays ,” MIT Lincoln Laboratory Journal, vol.
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Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR
[1] M. A. Albota, B. F. Aull, D. G. Fouche, et al., “Three-dimensional imaging laser radars with Geiger-mode avalanche photodiode arrays ,” MIT Lincoln Laboratory Journal, vol.
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Feasibility study to determine correct focus by analyzing photon distributions on Geiger-mode avalanche photodiode focal plane array
Willard, and R. R. Carlson, “Three-dimensional imaging laser radar with a photon-counting avalanche photodiode array and microchip laser,” Appl.
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OSA | Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature
E. Sciacca, G. Condorelli, S. Aurite, S. Lombardo, M. Mazzillo, D. Sanfilippo, G. Fallica, and E. Rimini, “Crosstalk Characterization in Geiger-Mode Avalanche Photodiode Arrays ,” IEEE Electron Device Lett. 29(3), 218–220 (2008).