Processes of the interaction of incident ions with the solids are described as a rule with the help of the presentation of subsequent collisions of the ion with single atoms. The main primary processes, which determine interaction of the light ions with the solid, are: displacement of the electrons (ionization), displacement of the atoms from the sites of the lattice, excitement of the atoms and the electrons without the displacement, and nuclear transformations. The last one take place in the semiconductors by the use of sufficiently energetic ions (for example, the protons with the energy higher than 5 MeV). Research of the last decade revealed that the main three factors influencing modification of the properties of the semiconductors during the proton irradiation, are: production of the new impurities as the result of the nuclear reactions, radiation defect production and accumulation of the hydrogen atoms. From this point of view we shall consider the processes of the proton interaction with single-crystalline semiconductors. Information about another ions and another solids one can find elsewhere [Dienes, G. J. and Vineyard, G. H. (1957), Lehmann, Chr. (1977), Ohtsuki, Y. H. (1983), Pleshivtsev, N. B. and Bazhin, A. I. (1998) ]