The acidic pH value is stable, maintaininga high and stable polishing rate.
Combines rough and fine polishing into a single process, greatly reducing process-ing costs and improving processingefficiency.

The total time of traditional rough polishing and fine polishing is 6-9 hours, and high-efficiency CMP can be used for 2-3 hours to meet polishing requirements.
After polishing with high-efficiency CMP, the Ra values that can be achieved on the carbon and silicon surfaces of silicon carbide are: Si: 0.115nm C: 0.127nm.