Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and minimized gate charge, enhancing efficiency and power density. Its high repetitive avalanche rating ensures durability and reliability in challenging environments, making it a preferred choice for power management solutions.  

Packaged in a TO-247, the GSFA20106 is optimized for use in DC-DC converters, battery management systems (BMS), micro-inverters, onboard power supplies for servers, and motor control applications. The device’s low conduction and switching losses make it particularly suitable for high-power density point-of-load applications, where efficiency and thermal performance are critical. Its robust design supports uni-directional high-frequency switching, improving overall system stability and performance.  

With exceptional electrical characteristics and a rugged package, the GSFA20106 delivers superior power handling for industrial, automotive, and renewable energy applications. Its advanced thermal management and reliability ensure long-term operation, even in harsh conditions.

For more details, contact New Yorker Electronics at 201-750-1171 or email sales@newyorkerelectronics.com.