Announcing the launch of e-mode GaN FETs for low & high voltage applications.

Nexperia’s new portfolio includes two ≤ 150 V rated devices (3.2 mΩ and 7 mΩ) in WLCSP8 and FCLGA packages, as well as five 650 V rated devices, with R_DS(on) values between 80 mΩ - 190 mΩ, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. Nexperia e-mode GaN FETs provide the ideal balance between switching performance and robustness, for use in industrial and consumer applications.