Product Announcements:
Semiconductors

QPF5001 is a multi-die front-end module (FEM) designed for 8-12 GHz X-Band applications. The FEM integrates limiter, low-noise amplifier, and power amplifier. QPF5001 is configured to interface with a circulator. Transmit power is 12W saturated, receiver noise figure is 1.5dB.

Lead free and RoHS compliant. Read more...

Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater than 37 dBm (5 W) with an associated power-added efficiency of 22 %.

The QPA4003 is pa... Read more...

Hamamatsu Photonics’ easy-to-use C16795 series InGaAs area image sensor module features a high dynamic range and improved image quality, especially in low-light conditions. With a high-speed performance of up to 503 frames per second and an integrated InGaAs area image sensor, it offers enhanced light sensitivity and clarity in your imaging results. Read more...

Good-Ark Semiconductor’s GSFA20106 is a 200V, 106A, 9.4mΩ N-Channel MOSFET designed for high-frequency switching applications. Utilizing advanced deep trench technology, it offers ultra-low RDS(ON), reduced gate charge, and high avalanche capability. Packaged in TO-247, it is ideal for DC-DC converters, BMS, micro-inverters, motor control, and high-power density applications. Read more...

Hamamatsu Photonics introduces its G1719X series of InGaAs PIN photodiodes: compact, surface-mounted NIR sensors with low dark current designed for infrared applications, including gas sensing, laser application, and remote temperature sensing. Read more...

A new generation of pressure sensor technology brings new
features to EV battery protection and emerging requirements. Read more...

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RF front-end module (FEM) for Bluetooth® Low Energy, Bluetooth® mesh, Thread and Zigbee and 2.4 GHz proprietary range extension Read more...

Ever since Tesla and Edison crossed their ‘AC / DC sabres’, flipping a switch of a power circuit introduced a shocking risk: arcing. Arcing, both inventors learned later, is caused when the potential difference (measured in volts) between poles causes the air between them to heat up so extremely that it turns into a plasma. In other ominous words: the insulator becomes a cond... Read more...

Ideal for use in data centers, telecommunications equipment and consumer electronics where low power consumption and high stability is needed Read more...