ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong. At the start of season three, the leading Japanese semiconductor manufacturer started sponsoring and officially partnering with the Venturi Formula E team. Read more...More Product Announcements from ROHM Semiconductor USA, LLC
ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. Read more...More Product Announcements from ROHM Semiconductor USA, LLC
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of mo... Read more...More Product Announcements from Richardson RFPD
The power choice for 48V applications. Read more...More Product Announcements from Infineon Technologies AG
Part number: C2M0080170P
Wolfspeed extends its leadership in SiC technology by introducing two 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments.
The package includes a separate kelvin source pin which reduces the sour... Read more...More Product Announcements from Richardson RFPD
Wolfspeed's CRD-15DD17P - Wide Input Voltage Rage (300VDC - 1200VDC) 15W Flyback Auxiliary Power Supply Board from Richardson RFPD
- Demonstration of the efficient operation of Cree's 1700 V, 1Ω SiC MOSFET with an availability of high blocking voltage and high creepage distance (~7mm)
- Cree's 15 W flyback auxiliary power supply board can accept a wide rang...
High Current PROFET™ BTS7004-1EPP: 12V high side switch for loads in automotive and industrial applications. Read more...More Product Announcements from Infineon Technologies AG
The first product in Microsemi's next-gen 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B features high avalanche rating, a high short circuit withstand rating for robust operation, and ruggedness for industrial, automotive and commercial aviation power applications.
- Low capacitances and low gate charge
- Fast switching speed due to low int...