Richardson RFPD

Part number: C2M0080170P

Wolfspeed extends its leadership in SiC technology by introducing two 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments.

The package includes a separate kelvin source pin which reduces the sour... Read more...

More Product Announcements from Richardson RFPD
Richardson RFPD

Wolfspeed's CRD-15DD17P - Wide Input Voltage Rage (300VDC - 1200VDC) 15W Flyback Auxiliary Power Supply Board from Richardson RFPD

  • Demonstration of the efficient operation of Cree's 1700 V, 1Ω SiC MOSFET with an availability of high blocking voltage and high creepage distance (~7mm)
  • Cree's 15 W flyback auxiliary power supply board can accept a wide rang...
Read more...

More Product Announcements from Richardson RFPD
Infineon Technologies AG

High Current PROFET™ BTS7004-1EPP: 12V high side switch for loads in automotive and industrial applications. Read more...

More Product Announcements from Infineon Technologies AG
Richardson RFPD

Wolfspeed KIT8020-CRD-5FF0917P-2: Evaluation Board for Cree’s (C3MTM) Silicon Carbide MOSFET in a TO-247-4 Package Read more...

More Product Announcements from Richardson RFPD
Richardson RFPD

The first product in Microsemi's next-gen 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B features high avalanche rating, a high short circuit withstand rating for robust operation, and ruggedness for industrial, automotive and commercial aviation power applications.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low int...
Read more...

More Product Announcements from Richardson RFPD
Richardson RFPD

GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX® packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in de... Read more...

More Product Announcements from Richardson RFPD
Infineon Technologies AG

Infineon’s answer for resonant high power topologies - high voltage superjunction MOSFET Read more...

More Product Announcements from Infineon Technologies AG
ROHM Semiconductor USA, LLC

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong. At the start of season three, the leading Japanese semiconductor manufacturer started sponsoring and officially partnering with the Venturi Formula E team. Read more...

More Product Announcements from ROHM Semiconductor USA, LLC