ROHM Semiconductor USA, LLC

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong. At the start of season three, the leading Japanese semiconductor manufacturer started sponsoring and officially partnering with the Venturi Formula E team. Read more...

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ROHM Semiconductor USA, LLC

ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. Read more...

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Richardson RFPD

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of mo... Read more...

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Wolfspeed

New Wolfspeed Silicon Carbide Semiconductors First to Meet Automotive AEC-Q101 Standards Read more...

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Richardson RFPD

Part number: C2M0080170P

Wolfspeed extends its leadership in SiC technology by introducing two 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments.

The package includes a separate kelvin source pin which reduces the sour... Read more...

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Richardson RFPD

Wolfspeed's CRD-15DD17P - Wide Input Voltage Rage (300VDC - 1200VDC) 15W Flyback Auxiliary Power Supply Board from Richardson RFPD

  • Demonstration of the efficient operation of Cree's 1700 V, 1Ω SiC MOSFET with an availability of high blocking voltage and high creepage distance (~7mm)
  • Cree's 15 W flyback auxiliary power supply board can accept a wide rang...
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Infineon Technologies AG

High Current PROFET™ BTS7004-1EPP: 12V high side switch for loads in automotive and industrial applications. Read more...

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Richardson RFPD

Wolfspeed KIT8020-CRD-5FF0917P-2: Evaluation Board for Cree’s (C3MTM) Silicon Carbide MOSFET in a TO-247-4 Package Read more...

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Richardson RFPD

The first product in Microsemi's next-gen 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B features high avalanche rating, a high short circuit withstand rating for robust operation, and ruggedness for industrial, automotive and commercial aviation power applications.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low int...
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