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Win Source Electronics

High-performance NPN transistor with 40V Vce and 200mA Ic in a compact SOT-23-3 package, ideal for general-purpose amplifier and switching applications. Read more...

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Win Source Electronics

Discover the BSS138PW,115 N-channel MOSFET by Nexperia USA Inc., featuring a 60V drain-source breakdown voltage and 320mA continuous drain current. Ideal for various electronic applications. Read more...

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Win Source Electronics

The MMBT3904-7-F from Diodes Incorporated is a high-gain NPN transistor, ideal for various electronic applications. Read more...

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Win Source Electronics

The ON Semiconductor MMBT3904LT3G is a high-quality NPN bipolar transistor, ideal for general-purpose amplifier and switching applications. Read more...

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Win Source Electronics

The BSS138DW-7-F by Diodes Incorporated is a high-performance dual N-channel enhancement mode field-effect transistor (FET), designed for efficient power management in space-constrained applications. With low on-resistance, high-speed switching, and a compact SOT-363 package, it's an ideal solution for various electronic designs. Read more...

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Win Source Electronics

The BSS123-7-F, manufactured by Diodes Incorporated, is a high-performance N-channel MOSFET with low on-resistance and high-speed switching characteristics, suitable for a wide range of applications. Read more...

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Nexperia B.V.

New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A. Read more...

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New Yorker Electronics Co., Inc.

Requiring 50% Less PCB Space than Discrete Devices, this Space-Saving Device from New Yorker Reduces Component Counts and Simplifies Designs Read more...

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