ROHM Semiconductor USA, LLC

ROHM recently announced the development of a 1700V/250A rated SiC power module that provides the industry’s highest level of reliability optimized for inverter and converter applications such as outdoor power generation systems and industrial high power supplies Read more...

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ROHM Semiconductor USA, LLC

This latest 1700V module introduces a new packaging method and coating materials to protect the chip, which allows achieving the first successful commercialization of a 1700V SiC Module, passing the HV-H3TRB reliability tests. Read more...

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TT Semiconductor, Inc.

The 9110 is a BiC/DMOS integrated circuit designed for use as a high-performance switchmode controller. It is available in ceramic packages with an operating temperature of 200C. Read more...

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ROHM Semiconductor USA, LLC

ROHM's high voltage resistance PrestoMOS™ series is ideal for power supplies with integrated inverter. High-speed switching combined with an internal diode with high trr characteristics result in greater efficiency and lower loss while contributing to smaller designs. New package types, including the CPT3 (D-PAK) and LPT (D2-PAK) are currently being developed. Read more...

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ROHM Semiconductor

ROHM's optical sensors serve as eyes to monitor changes of any motions, and comply with customer's day-to-day diversifying requests. Read more...

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Richardson RFPD

EVALUATION BOARD: GS61008P-EVBHF

100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of GaN Systems' GaN E-HEMT in a high-performance DC/DC synchronous buck environment. Read more...

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Richardson RFPD

What’s the fastest way to experience a Class -D Audio Amplifier with a better listening experience? The new GS61004B-EVBCD Evaluation Platform from Richardson RFPD.

The key to unlocking the potential of the Class D amplifier is an ultra-fast switching transistor. GaN Systems’ Gallium Nitride E-HEMTs switch at 10x the speed of a Silicon transistor. This translates to su... Read more...

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Richardson RFPD

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Read more...

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Richardson RFPD

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. Read more...

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