Win Source Electronics

High-performance NPN transistor in a compact SOT-23-3 package. Ideal for signal amplification and switching applications with 40V Vce and 200mA Ic, providing high reliability for professional and hobbyist engineers. Read more...

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Win Source Electronics

The ULN2803ADWR from Texas Instruments is a high-voltage, high-current Darlington transistor array, perfect for controlling loads like solenoids, relays, and motors. Ideal for automotive, industrial, and consumer electronics applications. Read more...

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Win Source Electronics

The BSS138DW-7-F by Diodes Incorporated is a high-performance dual N-channel enhancement mode field-effect transistor (FET), designed for efficient power management in space-constrained applications. With low on-resistance, high-speed switching, and a compact SOT-363 package, it's an ideal solution for various electronic designs. Read more...

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Win Source Electronics

The NXP BSS123,215 is a high-performance N-channel enhancement mode MOSFET, ideal for high-speed switching and low-power electronic applications. Read more...

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Qorvo

The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.

Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. Read more...

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Win Source Electronics

The ON Semiconductor MMBT3904LT3G is a high-quality NPN bipolar transistor, ideal for general-purpose amplifier and switching applications. Read more...

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Win Source Electronics

The MMBT3904-7-F from Diodes Incorporated is a high-gain NPN transistor, ideal for various electronic applications. Read more...

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Win Source Electronics

Discover the BSS138PW,115 N-channel MOSFET by Nexperia USA Inc., featuring a 60V drain-source breakdown voltage and 320mA continuous drain current. Ideal for various electronic applications. Read more...

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