Product Announcements:
Transistors

IAV and Nexperia are exploring a new high-voltage EV architecture through the ONE Inverter concept. Combining IAV’s software-defined system and battery control expertise with Nexperia’s wide-bandgap semiconductor technologies, the approach enables more efficient use of battery capacity by dynamically managing battery sections and combining power electronics functions in one s... Read more...

Nexperia has expanded its portfolio of 650 V industrial-grade GaN FETs for power conversion applications. The range includes 35 mΩ, 50 mΩ and 70 mΩ devices in TO-247-3, TO-247-4, TOLL and TOLT packages. The additions give engineers greater flexibility to optimise efficiency, thermal performance and power density across datacenter, telecom, renewable energy, BESS and ind... Read more...

High-performance NPN transistor in a compact SOT-23-3 package. Ideal for signal amplification and switching applications with 40V Vce and 200mA Ic, providing high reliability for professional and hobbyist engineers. Read more...

The ULN2803ADWR from Texas Instruments is a high-voltage, high-current Darlington transistor array, perfect for controlling loads like solenoids, relays, and motors. Ideal for automotive, industrial, and consumer electronics applications. Read more...

High-performance WSF15N10 MOSFET in TO-252 package offers low on-resistance and fast switching, ideal for power management and motor control applications. Read more...

Surface-mount PNP transistor with 600mA max collector current and 60V voltage rating, ideal for robust switching and amplification in discrete semiconductor applications. Read more...

The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.

Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. Read more...

The ON Semiconductor MMBT3904LT3G is a high-quality NPN bipolar transistor, ideal for general-purpose amplifier and switching applications. Read more...

The MMBT3904-7-F from Diodes Incorporated is a high-gain NPN transistor, ideal for various electronic applications. Read more...

Discover the BSS138PW,115 N-channel MOSFET by Nexperia USA Inc., featuring a 60V drain-source breakdown voltage and 320mA continuous drain current. Ideal for various electronic applications. Read more...