Product Announcements:
Transistors

Part No

2N7002LT1G

Manufacturer

ON Semiconductor

Catalog

Transistors - FETs, MOSFETs - RF

Description

MOSFET N-CH 60V 0.115A SOT-23 Read more...

The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are a... Read more...

Part No

NTA4153NT1G

Manufacturer

ON Semiconductor

Catalog

Transistors - FETs, MOSFETs - RF

Description

MOSFET N-CH 20V 915MA SOT-416

Rohs State

Need to verify Read more...

Specifications

• Manufacturer: Nexperia B.V.
• Manufacturer Part Number: BC857BV,115
• Product Category: Transistors
• Transistor Type: BJT; Bipolar RF
• Polarity: PNP
• Package Type: SOT3

Details:

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr: Nexperia USA... Read more...

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.
The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN... Read more...

Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

L Read more...

Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Le... Read more...

Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN packa... Read more...

ROHM and Delta Electronics Form a Strategic Partnership on Developing Power Devices for Power Supply Systems
Accelerating technological innovation in power supply systems centered on GaN power devices Read more...

ROHM starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage

The first series of the new EcoGaN™ family contributes to lower power consumption and greater miniaturization in data centers and base stations Read more...