New Yorker Electronics Co., Inc.

New SiZF300DT 30V MOSFET Half-Bridge Power Stage with Integrated Schottky Diode Delivers 11% Higher Output Current than Other Solutions Read more...

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Nexperia

Nexperia BCXxT 80V 1A Bipolar Junction Transistors (BJT) offer high power dissipation capability in a SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. Read more...

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Nexperia

Nexperia BC817K NPN General-Purpose Transistors are AEC-Q101 qualified devices that feature three current gain selections. Read more...

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ROHM Semiconductor USA, LLC

ROHM's 3rd generation trench gate Silicon Carbide (SiC) MOSFETs are offered in a new 4-pin TO-247-4L package that adds a gate driver source pin separate from the standard power source pin. Read more...

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Nexperia

Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency Read more...

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Digi-Key Electronics

ON Semiconductor's silicon carbide (SiC) MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Read more...

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ROHM Semiconductor USA, LLC

ROHM recently announced the addition of four new automotive-grade 1200V-rated IGBTs which are ideal for inverters used in electronics compressors and for switching circuits used in positive temperature coefficient (PTC) heaters. Read more...

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ROHM Semiconductor USA, LLC

Four new devices of 1200V-rated IGBTs and expanded its lineup of AEC-Q101compliant IGBTs. This class-leading low conduction loss IGBT allows compact and highly-efficient designs. 1200V-rated devices featuring a short-circuit resistance of 10 μsec (Tj=25ºC) also ensures the reliability for automotive applications. Read more...

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ROHM Semiconductor USA, LLC

ROHM 1,700V/250A Full SiC Power Module has the industry’s highest level of reliability in high temperature and high humidity standards. With better switching characteristics than Si solutions it allows the miniaturization of heatsink and surrounded components in applications.
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Richardson RFPD

GaN Systems' GS-065-0xx-1-L devices - available as 3.5A, 8A and 11A devices - are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

  • Industry standard 5 mm x 6 mm PDFN packages
  • Assembly using standard SMT process
  • Scalable: 3.5 A to 11 A in the same footprint
  • Fast, clean switching spee...
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